P-21: n-type Organic Thin Film Transistors with High Operational Stability

n‐type organic thin film transistors (OTFTs) with high operational stability was demonstrated. The operational stability of N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (PTCDI‐C13)‐based OTFTs was improved by engineering organic semiconductor‐gate insulator interface with hydrophobic pol...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2014-06, Vol.45 (1), p.1021-1023
Main Authors: Roh, Jeongkyun, Kang, Chan-Mo, Shin, Hyeonwoo, Kwak, Jeonghun, Jung, Byung Jun, Lee, Changhee
Format: Article
Language:English
Subjects:
Camps
Diimide
Electron mobility
Equivalence
Insulators
n-type OTFT
operational stability
organic thin film transistors
Polymers
Semiconductor devices
Solar energy
Stability
Thin film transistors
Thin films
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Summary:n‐type organic thin film transistors (OTFTs) with high operational stability was demonstrated. The operational stability of N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (PTCDI‐C13)‐based OTFTs was improved by engineering organic semiconductor‐gate insulator interface with hydrophobic polymers. Under high gate bias stress (equivalent to the electric field of 3MV/cm) for two hours, OTFTs with hydrophobic polymers showed small threshold voltage shift around 2 V. Moreover, the electron mobility was improved from 0.038 to 0.14–0.15 cm2/Vs with hydrophobic polymers.
ISSN:0097-966X
2168-0159
DOI:10.1002/j.2168-0159.2014.tb00265.x