P-9: Study of the Origin of Major Donor States in Oxide Semiconductor

The investigation of donor states is an important issue for characteristics and reliability of FETs. We succeeded in identifying the origin of donor states of InGaZnO through experiments and calculations. In addition, the number of photomasks is reduced by applying this mechanism.

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2014-06, Vol.45 (1), p.975-978
Main Authors: Oota, Masashi, Ishihara, Noritaka, Nakashima, Motoki, Kurosawa, Yoichi, Hirohashi, Takuya, Takahashi, Masahiro, Yamazaki, Shunpei, Obonai, Toshimitsu, Hosaka, Yasuharu, Koezuka, Junichi, Kanzaki, Yohsuke, Matsukizono, Hiroshi, Kaneko, Seiji, Matsuo, Takuya
Format: Article
Language:English
Subjects:
Bills
Mathematical analysis
Origins
Oxides
Photomasks
Roads & highways
Semiconductors
Technical papers
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Description
Summary:The investigation of donor states is an important issue for characteristics and reliability of FETs. We succeeded in identifying the origin of donor states of InGaZnO through experiments and calculations. In addition, the number of photomasks is reduced by applying this mechanism.
ISSN:0097-966X
2168-0159
DOI:10.1002/j.2168-0159.2014.tb00253.x