P-25: Top Gate Amorphous In-Ga-Zn-O Thin Film Transistors Fabricated on Soda-Lime-Silica Glass Substrates

This work presents a comparative analysis of top gate a‐IGZO TFTs fabricated on both soda‐lime‐silica glass and alkali‐free borosilicate glass. Low‐temperature ALD is selected for the deposition of gate dielectric to minimize a thermal stress. Comparing with TFTs on alkali‐free borosilicate glass, T...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2014-06, Vol.45 (1), p.1035-1038
Main Authors: Baek, Gwanghyeon, Krasnov, Alex, Boer, Willem den, Kanicki, Jerzy
Format: Article
Language:English
Subjects:
a-IGZO
borosilicate
Borosilicate glasses
Degradation
Deposition
Gates
Glass
Glass substrates
Semiconductor devices
soda-lime
soda-lime-silica
stability
substrate
TFT
Thin film transistors
Thin films
thin-film transistor
uniformity
Variability
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Summary:This work presents a comparative analysis of top gate a‐IGZO TFTs fabricated on both soda‐lime‐silica glass and alkali‐free borosilicate glass. Low‐temperature ALD is selected for the deposition of gate dielectric to minimize a thermal stress. Comparing with TFTs on alkali‐free borosilicate glass, TFTs with soda‐lime‐glass show similar threshold voltage and sub‐threshold swing, but slightly degraded effective mobility, stability and uniformity. The results of atomic force measurements are provided to explain the uniformity degradation.
ISSN:0097-966X
2168-0159
DOI:10.1002/j.2168-0159.2014.tb00269.x