10.2: Invited Paper: Development of Oxide TFT's Structures

Advanced structures of oxide TFT have been studied for various display applications. Oxide TFT with etch‐stopped layer has shown excellent uniformity and stability for display products. For mass production with low cost, however, back channel etched structure with/without titanium etch‐stopped one h...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2013-06, Vol.44 (1), p.89-92
Main Authors: Bae, Jong UK, Kim, Dae Hwan, Kim, Kitae, Jung, Kiyoung, Shin, Woosup, Kang, Inbyeong, Yeo, SangDeog
Format: Article
Language:English
Subjects:
Channels
coplanar
Electrical properties
Etching
IGZO
Metal Oxide semiconductor
OLED
Oxides
reliability
Semiconductor devices
Stability
structure
TFT
Thin film transistors
Variability
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Summary:Advanced structures of oxide TFT have been studied for various display applications. Oxide TFT with etch‐stopped layer has shown excellent uniformity and stability for display products. For mass production with low cost, however, back channel etched structure with/without titanium etch‐stopped one has been studied and demonstrated promising electrical properties comparable to etch stop structure. Furthermore, we have developed self‐aligned coplanar structure as one of ways to minimize parasitic capacitance and found excellent electrical properties and bias stability at 6 μm of channel length, which is demonstrated with 13.3 inch AMOLED.
ISSN:0097-966X
2168-0159
DOI:10.1002/j.2168-0159.2013.tb06148.x