10.2: Invited Paper: Development of Oxide TFT's Structures

Advanced structures of oxide TFT have been studied for various display applications. Oxide TFT with etch‐stopped layer has shown excellent uniformity and stability for display products. For mass production with low cost, however, back channel etched structure with/without titanium etch‐stopped one h...

Full description

Saved in:
Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2013-06, Vol.44 (1), p.89-92
Main Authors: Bae, Jong UK, Kim, Dae Hwan, Kim, Kitae, Jung, Kiyoung, Shin, Woosup, Kang, Inbyeong, Yeo, SangDeog
Format: Article
Language:English
Subjects:
Channels
coplanar
Electrical properties
Etching
IGZO
Metal Oxide semiconductor
OLED
Oxides
reliability
Semiconductor devices
Stability
structure
TFT
Thin film transistors
Variability
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c3308-493f91618df5cf42fd4201481c53b5d6353ee2cd5af2216b29b9f32e50cf827b3
cites cdi_FETCH-LOGICAL-c3308-493f91618df5cf42fd4201481c53b5d6353ee2cd5af2216b29b9f32e50cf827b3
container_end_page 92
container_issue 1
container_start_page 89
container_title SID International Symposium Digest of technical papers
container_volume 44
creator Bae, Jong UK
Kim, Dae Hwan
Kim, Kitae
Jung, Kiyoung
Shin, Woosup
Kang, Inbyeong
Yeo, SangDeog
description Advanced structures of oxide TFT have been studied for various display applications. Oxide TFT with etch‐stopped layer has shown excellent uniformity and stability for display products. For mass production with low cost, however, back channel etched structure with/without titanium etch‐stopped one has been studied and demonstrated promising electrical properties comparable to etch stop structure. Furthermore, we have developed self‐aligned coplanar structure as one of ways to minimize parasitic capacitance and found excellent electrical properties and bias stability at 6 μm of channel length, which is demonstrated with 13.3 inch AMOLED.
doi_str_mv 10.1002/j.2168-0159.2013.tb06148.x
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1660059538</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1660059538</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3308-493f91618df5cf42fd4201481c53b5d6353ee2cd5af2216b29b9f32e50cf827b3</originalsourceid><addsrcrecordid>eNqVkEtLAzEUhYMoWB__YdCFbmbMu0lXSrW1UnxgRXdhHjcwddqpyYzWf2-GShfuXOVCvvNxOAidEJwQjOnFPKFEqhgToROKCUuaDEvCVbLeQb3t1y7qYaz7sZbybR8deD_HmDHOdQ8NgokOosnys2ygiB7TFbhBdA2fUNWrBSybqLbRw7osIJqNZmc-em5cmzetA3-E9mxaeTj-fQ_Ry-hmNryNpw_jyfBqGueMYRVzzawmkqjCitxyagsemnJFcsEyUUgmGADNC5FaGhpnVGfaMgoC51bRfsYO0fnGu3L1Rwu-MYvS51BV6RLq1hsiJcZCC6YCevoHndetW4Z2gWKKC4U5D9RgQ-Wu9t6BNStXLlL3bQg23axmbrrtTLed6WY1v7OadQhfbsJfZQXf_0ia5-vZY3cGRbxRlL6B9VaRuncj-6wvzOv92JDRWD7dkVczZT_5jYun</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1638458044</pqid></control><display><type>article</type><title>10.2: Invited Paper: Development of Oxide TFT's Structures</title><source>Wiley-Blackwell Read &amp; Publish Collection</source><creator>Bae, Jong UK ; Kim, Dae Hwan ; Kim, Kitae ; Jung, Kiyoung ; Shin, Woosup ; Kang, Inbyeong ; Yeo, SangDeog</creator><creatorcontrib>Bae, Jong UK ; Kim, Dae Hwan ; Kim, Kitae ; Jung, Kiyoung ; Shin, Woosup ; Kang, Inbyeong ; Yeo, SangDeog</creatorcontrib><description>Advanced structures of oxide TFT have been studied for various display applications. Oxide TFT with etch‐stopped layer has shown excellent uniformity and stability for display products. For mass production with low cost, however, back channel etched structure with/without titanium etch‐stopped one has been studied and demonstrated promising electrical properties comparable to etch stop structure. Furthermore, we have developed self‐aligned coplanar structure as one of ways to minimize parasitic capacitance and found excellent electrical properties and bias stability at 6 μm of channel length, which is demonstrated with 13.3 inch AMOLED.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1002/j.2168-0159.2013.tb06148.x</identifier><language>eng</language><publisher>Oxford, UK: Blackwell Publishing Ltd</publisher><subject>Channels ; coplanar ; Electrical properties ; Etching ; IGZO ; Metal Oxide semiconductor ; OLED ; Oxides ; reliability ; Semiconductor devices ; Stability ; structure ; TFT ; Thin film transistors ; Variability</subject><ispartof>SID International Symposium Digest of technical papers, 2013-06, Vol.44 (1), p.89-92</ispartof><rights>2013 Society for Information Display</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3308-493f91618df5cf42fd4201481c53b5d6353ee2cd5af2216b29b9f32e50cf827b3</citedby><cites>FETCH-LOGICAL-c3308-493f91618df5cf42fd4201481c53b5d6353ee2cd5af2216b29b9f32e50cf827b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Bae, Jong UK</creatorcontrib><creatorcontrib>Kim, Dae Hwan</creatorcontrib><creatorcontrib>Kim, Kitae</creatorcontrib><creatorcontrib>Jung, Kiyoung</creatorcontrib><creatorcontrib>Shin, Woosup</creatorcontrib><creatorcontrib>Kang, Inbyeong</creatorcontrib><creatorcontrib>Yeo, SangDeog</creatorcontrib><title>10.2: Invited Paper: Development of Oxide TFT's Structures</title><title>SID International Symposium Digest of technical papers</title><description>Advanced structures of oxide TFT have been studied for various display applications. Oxide TFT with etch‐stopped layer has shown excellent uniformity and stability for display products. For mass production with low cost, however, back channel etched structure with/without titanium etch‐stopped one has been studied and demonstrated promising electrical properties comparable to etch stop structure. Furthermore, we have developed self‐aligned coplanar structure as one of ways to minimize parasitic capacitance and found excellent electrical properties and bias stability at 6 μm of channel length, which is demonstrated with 13.3 inch AMOLED.</description><subject>Channels</subject><subject>coplanar</subject><subject>Electrical properties</subject><subject>Etching</subject><subject>IGZO</subject><subject>Metal Oxide semiconductor</subject><subject>OLED</subject><subject>Oxides</subject><subject>reliability</subject><subject>Semiconductor devices</subject><subject>Stability</subject><subject>structure</subject><subject>TFT</subject><subject>Thin film transistors</subject><subject>Variability</subject><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqVkEtLAzEUhYMoWB__YdCFbmbMu0lXSrW1UnxgRXdhHjcwddqpyYzWf2-GShfuXOVCvvNxOAidEJwQjOnFPKFEqhgToROKCUuaDEvCVbLeQb3t1y7qYaz7sZbybR8deD_HmDHOdQ8NgokOosnys2ygiB7TFbhBdA2fUNWrBSybqLbRw7osIJqNZmc-em5cmzetA3-E9mxaeTj-fQ_Ry-hmNryNpw_jyfBqGueMYRVzzawmkqjCitxyagsemnJFcsEyUUgmGADNC5FaGhpnVGfaMgoC51bRfsYO0fnGu3L1Rwu-MYvS51BV6RLq1hsiJcZCC6YCevoHndetW4Z2gWKKC4U5D9RgQ-Wu9t6BNStXLlL3bQg23axmbrrtTLed6WY1v7OadQhfbsJfZQXf_0ia5-vZY3cGRbxRlL6B9VaRuncj-6wvzOv92JDRWD7dkVczZT_5jYun</recordid><startdate>201306</startdate><enddate>201306</enddate><creator>Bae, Jong UK</creator><creator>Kim, Dae Hwan</creator><creator>Kim, Kitae</creator><creator>Jung, Kiyoung</creator><creator>Shin, Woosup</creator><creator>Kang, Inbyeong</creator><creator>Yeo, SangDeog</creator><general>Blackwell Publishing Ltd</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>7SR</scope><scope>JG9</scope></search><sort><creationdate>201306</creationdate><title>10.2: Invited Paper: Development of Oxide TFT's Structures</title><author>Bae, Jong UK ; Kim, Dae Hwan ; Kim, Kitae ; Jung, Kiyoung ; Shin, Woosup ; Kang, Inbyeong ; Yeo, SangDeog</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3308-493f91618df5cf42fd4201481c53b5d6353ee2cd5af2216b29b9f32e50cf827b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Channels</topic><topic>coplanar</topic><topic>Electrical properties</topic><topic>Etching</topic><topic>IGZO</topic><topic>Metal Oxide semiconductor</topic><topic>OLED</topic><topic>Oxides</topic><topic>reliability</topic><topic>Semiconductor devices</topic><topic>Stability</topic><topic>structure</topic><topic>TFT</topic><topic>Thin film transistors</topic><topic>Variability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bae, Jong UK</creatorcontrib><creatorcontrib>Kim, Dae Hwan</creatorcontrib><creatorcontrib>Kim, Kitae</creatorcontrib><creatorcontrib>Jung, Kiyoung</creatorcontrib><creatorcontrib>Shin, Woosup</creatorcontrib><creatorcontrib>Kang, Inbyeong</creatorcontrib><creatorcontrib>Yeo, SangDeog</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Engineered Materials Abstracts</collection><collection>Materials Research Database</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bae, Jong UK</au><au>Kim, Dae Hwan</au><au>Kim, Kitae</au><au>Jung, Kiyoung</au><au>Shin, Woosup</au><au>Kang, Inbyeong</au><au>Yeo, SangDeog</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>10.2: Invited Paper: Development of Oxide TFT's Structures</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2013-06</date><risdate>2013</risdate><volume>44</volume><issue>1</issue><spage>89</spage><epage>92</epage><pages>89-92</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>Advanced structures of oxide TFT have been studied for various display applications. Oxide TFT with etch‐stopped layer has shown excellent uniformity and stability for display products. For mass production with low cost, however, back channel etched structure with/without titanium etch‐stopped one has been studied and demonstrated promising electrical properties comparable to etch stop structure. Furthermore, we have developed self‐aligned coplanar structure as one of ways to minimize parasitic capacitance and found excellent electrical properties and bias stability at 6 μm of channel length, which is demonstrated with 13.3 inch AMOLED.</abstract><cop>Oxford, UK</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1002/j.2168-0159.2013.tb06148.x</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0097-966X
ispartof SID International Symposium Digest of technical papers, 2013-06, Vol.44 (1), p.89-92
issn 0097-966X
2168-0159
language eng
recordid cdi_proquest_miscellaneous_1660059538
source Wiley-Blackwell Read & Publish Collection
subjects Channels
coplanar
Electrical properties
Etching
IGZO
Metal Oxide semiconductor
OLED
Oxides
reliability
Semiconductor devices
Stability
structure
TFT
Thin film transistors
Variability
title 10.2: Invited Paper: Development of Oxide TFT's Structures
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T01%3A40%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=10.2:%20Invited%20Paper:%20Development%20of%20Oxide%20TFT's%20Structures&rft.jtitle=SID%20International%20Symposium%20Digest%20of%20technical%20papers&rft.au=Bae,%20Jong%20UK&rft.date=2013-06&rft.volume=44&rft.issue=1&rft.spage=89&rft.epage=92&rft.pages=89-92&rft.issn=0097-966X&rft.eissn=2168-0159&rft_id=info:doi/10.1002/j.2168-0159.2013.tb06148.x&rft_dat=%3Cproquest_cross%3E1660059538%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c3308-493f91618df5cf42fd4201481c53b5d6353ee2cd5af2216b29b9f32e50cf827b3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1638458044&rft_id=info:pmid/&rfr_iscdi=true