Transparent amorphous memory cell: A bipolar resistive switching in ZnO/Pr0.7Ca0.3MnO3/ITO for invisible electronics application

• Published in: Journal of non-crystalline solids 2014-12, Vol.406, p.102-106
• Main Authors: Zhang, R., Miao, J., Shao, F., Huang, W.T., Dong, C., Xu, X.G., Jiang, Y.
• Format: Article
• Language: English
• Subjects: Amorphous; Cross-disciplinary physics: materials science; rheology; Cycles; Electronics; Exact sciences and technology; Glass; Laser deposition; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical transparent; PCMO; Physics; Pulsed laser deposition; Resistive switching; Switching; Thin films; Wavelengths; Zinc oxide; ZnO
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/j.jnoncrysol.2014.09.055

ZnO/Pr0.7Ca0.3MnO3 (ZnO/PCMO) amorphous thin films were grown on an indium-tin-oxide (ITO)/glass by pulsed laser deposition at room temperature. Interestingly, a stable bipolar resistive switching behavior of the ITO/ZnO/PCMO/ITO cell can be longer than 2.5×103cycles. The on/off ratio of switching behaviors is as high as 104. The structure of ITO/ZnO/PCMO/ITO exhibits a high average transparency of 79.6% in the visible range with a maximum transparency of 84.6% at 590nm wavelength. The conductive mechanism during switching cycling in our structure can be described by a trapped-control space charge limited current behavior. The ZnO/PCMO/ITO/glass structure shows a potential of the transparent memory for future invisible electronics devices. •ITO/ZnO/PCMO/ITO amorphous films were firstly investigated for the switching.•Stable bipolar resistive switching is maintained in ITO/ZnO/PCMO/ITO structure.•High transparency is obtained with a maximum transparency of 84.6% at 590nm.•It exhibits a potential application due to durable resistive switching behavior.