Combined effect of oxygen deficient point defects and Ni doping in radio frequency magnetron sputtering deposited ZnO thin films

• Published in: Thin solid films 2014-07, Vol.562, p.37-42
• Main Authors: Saha, B., Das, N.S., Chattopadhyay, K.K.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities in crystals; microstructure; Deposition by sputtering; Doping; Electrical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Magnetron sputtering; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nickel; Optical properties; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Point defects; Point defects (vacancies, interstitials, color centers, etc.) and defect clusters; Resistivity; Structure of solids and liquids; crystallography; Thin film doping; Thin films; Zinc oxide
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2014.03.038

Ni doped ZnO thin films with oxygen deficiency have been synthesized on glass substrates by radio frequency magnetron sputtering technique using argon plasma. The combined effect of point defects generated due to oxygen vacancies and Ni doping on the optical and electrical properties of ZnO thin films has been studied in this work. Ni doping concentrations were varied and the structural, optical and electrical properties of the films were studied as a function of doping concentrations. The films were characterized with X-ray diffractometer, UV–Vis–NIR spectrophotometer, X-ray photoelectron spectroscopy, atomic force microscopy and electrical conductivity measurements. Oxygen deficient point defects (Schottky defects) made the ZnO thin film highly conducting while incorporation of Ni dopant made it more functional regarding their electrical and optical properties. The films were found to have tunable electrical conductivity with Ni doping concentrations. •ZnO thin films prepared by radio frequency magnetron sputtering technique•Synthesis process was stimulated to introduce Schottky-type point defects.•Point defects and external doping of Ni made ZnO thin films more functional.•Point defect induced high electrical conductivity in ZnO thin film.•Significant shift in optical bandgap observed in ZnO with Ni doping concentrations