Indium–gallium–zinc oxide thin film transistors with a hybrid-channel structure for defect suppression and mobility improvement

In this work, we explore an indium gallium zinc oxide (IGZO) thin film transistor structure with a vacuum annealed IGZO thin film inserted between the dielectric and typical channel layers. The device demonstrates a better subthreshold swing and field-effect mobility due to the suppression of defect...

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Bibliographic Details
Published in:Thin solid films 2013-07, Vol.540, p.247-250
Main Authors: Lin, Huang-Kai, Su, Liang-Yu, Hung, Chia-Chin, Huang, JianJang
Format: Article
Language:English
Subjects:
Amorphous indium–gallium–zinc oxide
Applied sciences
Channels
Defects
Devices
Dielectrics
Electronics
Exact sciences and technology
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Subthreshold swing
Thin film transistors
Thin films
Threshold voltage
Transistors
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Summary:In this work, we explore an indium gallium zinc oxide (IGZO) thin film transistor structure with a vacuum annealed IGZO thin film inserted between the dielectric and typical channel layers. The device demonstrates a better subthreshold swing and field-effect mobility due to the suppression of defects in the channel and the channel/dielectric interface. The hybrid channel structure also exhibits the flexibility of adjusting the threshold voltage. The superior carrier mobility was then verified from the transient response of the inverter circuit constructed by the devices. •Additional in-situ annealed In–Ga–ZnO film was inserted in thin film transistor (TFT).•Traps are suppressed and field effect mobility is improved in the TFT.•An inverter with the device structure has a better transient response.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2013.06.002