Ga gradient behavior of CIGS thin films prepared through selenization of CuGa/In stacked elemental layers

In this study, Cu (In, Ga)Se2 (CIGS) film was formed using a two-stage process. Bilayer CuGa/In metallic precursors were sequentially deposited using both CuGa alloy and In targets in magnetron sputtering. Then, the Se layer was coated on the sputter-deposited CuGa/In precursors through evaporation....

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Bibliographic Details
Published in:Surface & coatings technology 2014-11, Vol.259, p.335-339
Main Authors: Sung, Huan-Hsin, Tsai, Du-Cheng, Chang, Zue-Chin, Kuo, Bing-Hau, Lin, Yi-Chen, Lin, Tien-Jen, Liang, Shih-Chang, Shieu, Fuh-Sheng
Format: Article
Language:English
Subjects:
Annealing
ANNEALING PROCESSES
ANNEALING TEMPERATURE
Chalcopyrite
CIGS
CIGS solar cell
COPPER GALLIUM ALLOYS
Copper indium gallium selenides
COPPER SELENIDE
Cross-disciplinary physics: materials science
rheology
DEPOSITION
DIFFUSION
Diffusion annealing
Exact sciences and technology
Ga gradient
Gallium base alloys
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Na diffusion
Physics
Precursors
Surface treatments
THIN FILMS
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Summary:In this study, Cu (In, Ga)Se2 (CIGS) film was formed using a two-stage process. Bilayer CuGa/In metallic precursors were sequentially deposited using both CuGa alloy and In targets in magnetron sputtering. Then, the Se layer was coated on the sputter-deposited CuGa/In precursors through evaporation. The diffusion behaviors of each element during the post-selenization annealing process were determined based on FESEM, XRD, and SIMS. The higher annealing temperature was proposed to have improved Ga diffusion toward the film surface, and thus, achieved the growth of more uniform, more densely packed, and larger grains. Moreover, Na and O contents were found to be correlated due to the strong affinity between Na and O. The distribution of Na seems to be similar to the Ga profile, which may be ascribed to the diffusion of Ga, which was retarded by Na and O. The CIGS films fabricated by the two-step method consisted of a single chalcopyrite phase, and the efficiency of the cell fabricated by the films was 2.56%. •CIGS film was formed using a two-stage process.•Each element of diffusion behavior was investigated.•The 2.56% conversion efficiency was achieved.
ISSN:0257-8972
1879-3347
DOI:10.1016/j.surfcoat.2014.02.039