Monte-Carlo simulation of microwave noise in n-type InSb

Numerical Monte Carlo calculations of the electron noise temperature dependence on the electric field strength in n-type InSb are presented. It is established that hot electron noise temperature in strongly compensated InSb increases with the increase of electron density due to more intensive electr...

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Bibliographic Details
Published in:Solid state sciences 2014-12, Vol.38, p.156-159
Main Authors: Ašmontas, Steponas, Raguotis, Romas, Bumelienė, Skaidra
Format: Article
Language:English
Subjects:
Compensated semiconductor
Computer simulation
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electric field strength
Electron density
Electron density of states and band structure of crystalline solids
Electron states
Exact sciences and technology
Indium antimonides
InSb
Intermetallics
Mathematical analysis
Monte Carlo
Monte Carlo methods
Noise temperature
Physics
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Summary:Numerical Monte Carlo calculations of the electron noise temperature dependence on the electric field strength in n-type InSb are presented. It is established that hot electron noise temperature in strongly compensated InSb increases with the increase of electron density due to more intensive electron–electron scattering stimulating delocalization of electrons from the bottom of the conduction band. For low electron density, when the electron–electron scattering is negligibly small, the electron noise temperature is found to become close to the lattice temperature in a wide range of electric field strength in which the electron gas cooling effect takes place. Satisfactory agreement between calculations of the electron noise temperature and available experimental data has been obtained. [Display omitted] •Impurity scattering of electrons reduces significantly microwave noise.•Electron noise temperature calculated by Monte Carlo method in compensated n-InSb.•Electron gas cooling effect obtained for low electron density.
ISSN:1293-2558
1873-3085
DOI:10.1016/j.solidstatesciences.2014.10.014