P.19: Density-of-States Based Device-Circuit Co-Design Platform for Solution-Processed Organic Integrated Circuits

In this work, we propose the subgap density‐of‐states (DOS) based device‐circuit co‐design platform for solution‐processed organic integrated circuits. For the circuit simulation, analytical I‐V and C‐V model were established from experimentally extracted DOS parameters, incorporated into HSPICE via...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2013-06, Vol.44 (1), p.1051-1054
Main Authors: Jang, Jaeman, Kim, Jaehyeong, Lee, Jaewook, Jo, Chunhyung, Jun, Sungwoo, Kim, Hyeongjung, Choi, Sunwoong, Kim, Dong Myong, Lee, Jiyoul, Koo, Bonwon, Chung, Jong Won, Kim, Dae Hwan
Format: Article
Language:English
Subjects:
analytical model
circuit simulation
Co-design
Computer simulation
Density of states
Disk operating system (DOS)
Integrated circuits
Mathematical models
organic
Platforms
polymer
Solution process
thin-film transistors
Volt-ampere characteristics
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Description
Summary:In this work, we propose the subgap density‐of‐states (DOS) based device‐circuit co‐design platform for solution‐processed organic integrated circuits. For the circuit simulation, analytical I‐V and C‐V model were established from experimentally extracted DOS parameters, incorporated into HSPICE via Verilog‐A, and verified by comparing the simulation result with the measured characteristics of inverter integrated with solution‐processed polymer‐based organic thin‐film‐transistors. Furthermore, as the case study, it was shown by using our well‐calibrated simulation platform that the pass‐transistor type logic was potentially promising in low‐power and high‐speed solution processed organic integrated circuits.
ISSN:0097-966X
2168-0159
DOI:10.1002/j.2168-0159.2013.tb06404.x