High Power 1060 nm Distributed Feedback Semiconductor Laser

A GaAs based high power distributed feedback （DFB） semiconductor laser with a second-order grating has been demonstrated. An output power of 150row at an injection current of 350mA is realized with a 1-mm cavity length. With a new design of the waveguide structure, the DFB laser maintains a stable s...

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Bibliographic Details
Published in:Chinese physics letters 2014-02, Vol.31 (2), p.52-54
Main Author: 翟腾 谭少阳 陆丹 王圩 张瑞康 吉晨
Format: Article
Language:English
Subjects:
DFB激光器
Electric power distribution
Feedback
Gallium arsenide
Gallium arsenides
Holes
Injection current
Lasers
Semiconductor lasers
分布反馈
半导体激光器
波导结构
注入电流
输出功率
边模抑制比
高功率
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Description
Summary:A GaAs based high power distributed feedback （DFB） semiconductor laser with a second-order grating has been demonstrated. An output power of 150row at an injection current of 350mA is realized with a 1-mm cavity length. With a new design of the waveguide structure, the DFB laser maintains a stable single longitudinal mode around 106Ohm with a side mode suppression ratio of larger than 50dB.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/2/024203