52.3: Development of Back-channel-etched TFT Using C-Axis Aligned Crystalline In-Ga-Zn-Oxide

We have fabricated a back‐channel‐etched TFT using the CAAC‐IGZO film that we developed. As a factor of success in manufacturing stable back‐channel‐etched TFTs, it is considered that CAAC‐IGZO has a strong structure because of its crystallinity. For verification, we have compared the cohesive energ...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2013-06, Vol.44 (1), p.723-726
Main Authors: Koezuka, Junichi, Okazaki, Kenichi, Hirohashi, Takuya, Takahashi, Masahiro, Adachi, Shunsuke, Tsubuku, Masashi, Yamazaki, Shunpei, Kanzaki, Yohsuke, Matsukizono, Hiroshi, Kaneko, Seiji, Mori, Shigeyasu, Matsuo, Takuya
Format: Article
Language:English
Subjects:
Alignment
AM-LCD
Back-channel-etched TFT
Cohesion
Crystal structure
Crystallinity
First Principle Calculation
IGZO
Oxide-TFT
Semiconductor devices
Technical papers
Thin film transistors
Uniformity
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Summary:We have fabricated a back‐channel‐etched TFT using the CAAC‐IGZO film that we developed. As a factor of success in manufacturing stable back‐channel‐etched TFTs, it is considered that CAAC‐IGZO has a strong structure because of its crystallinity. For verification, we have compared the cohesive energy of c‐IGZO and that of a‐IGZO.
ISSN:0097-966X
2168-0159
DOI:10.1002/j.2168-0159.2013.tb06315.x