56.5L: Late-News Paper: All-Printed Oxide Thin Film Transistor Arrays for High Resolution Active Matrix

We have demonstrated all‐printed oxide TFT arrays for 100 ppi RGB active matrix fabricated by inkjet printing and spin coating without photolithography and mask process. The average mobility of TFTs was 7.49 ± 1.67 cm2/Vs on a thermally oxidized SiO2 /Si substrate. Moreover, in the case of using of...

Full description

Saved in:
Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2013-06, Vol.44 (1), p.786-789
Main Authors: Matsumoto, Shinji, Nakamura, Yuki, Arae, Sadanori, Sone, Yuji, Hirano, Yukiko, Abe, Mikiko, Saotome, Ryohichi, Ueda, Naoyuki, Yamada, Katsuyuki
Format: Article
Language:English
Subjects:
Arrays
Inkjet
Insulators
Oxide TFT
Oxides
Photolithography
Printed electronics
Semiconductor devices
Silicon substrates
Spin coating
Thin film transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have demonstrated all‐printed oxide TFT arrays for 100 ppi RGB active matrix fabricated by inkjet printing and spin coating without photolithography and mask process. The average mobility of TFTs was 7.49 ± 1.67 cm2/Vs on a thermally oxidized SiO2 /Si substrate. Moreover, in the case of using of a printed oxide high‐k gate insulator and an n‐type doped active layer on a glass substrate, the average mobility of all‐printed oxide TFTs was 2.54 ± 0.32 cm2/Vs.
ISSN:0097-966X
2168-0159
DOI:10.1002/j.2168-0159.2013.tb06333.x