A compact 2D potential model for subthreshold characterization of nanoscale fully depleted short channel nanowire MOSFETs

Summary In this work, a compact subthreshold model for fully depleted nanoscale short channel nanowire MOSFETs is proposed. It is based on an approximated solution of two‐dimensional Poisson's Equation in cylindrical coordinate system. It matches well with technology computer‐aided design simul...

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Bibliographic Details
Published in:International journal of numerical modelling 2015-03, Vol.28 (2), p.222-230
Main Authors: Xi, Liu, Xiao-Shi, Jin, Chuai, Rongyan, Jong-Ho, Lee
Format: Article
Language:English
Subjects:
Channels
compact modeling
Depletion
Devices
fully depleted
Mathematical models
MOSFETs
nanowire
Nanowires
Poisson equation
Two dimensional
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Summary:Summary In this work, a compact subthreshold model for fully depleted nanoscale short channel nanowire MOSFETs is proposed. It is based on an approximated solution of two‐dimensional Poisson's Equation in cylindrical coordinate system. It matches well with technology computer‐aided design simulation results in a wide range variation of design parameters without introducing any empirical fitting parameters. Copyright © 2014 John Wiley & Sons, Ltd.
ISSN:0894-3370
1099-1204
DOI:10.1002/jnm.2001