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Approaches to calculate the dielectric function of ZnO around the band gap
Being one of the most sensitive methods for optical thin film metrology ellipsometry is widely used for the characterization of zinc oxide (ZnO), a key material for optoelectronics, photovoltaics, and printable electronics and in a range of critical applications. The dielectric function of ZnO has a...
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Published in: | Thin solid films 2014-11, Vol.571, p.684-688 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Being one of the most sensitive methods for optical thin film metrology ellipsometry is widely used for the characterization of zinc oxide (ZnO), a key material for optoelectronics, photovoltaics, and printable electronics and in a range of critical applications. The dielectric function of ZnO has a special feature around the band gap dominated by a relatively sharp absorption feature and an excitonic peak. In this work we summarize and compare direct (point-by-point) and parametric approaches for the description of the dielectric function. We also investigate how the choice of the wavelength range influences the result, the fit quality and the sensitivity. Results on ZnO layers prepared by sputtering are presented.
•Dielectric function of zinc oxide thin film measured by spectroscopic ellipsometry•Direct and parametric approaches summarized and compared•Influence of chosen wavelength range on fit results investigated |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2014.03.028 |