Optical characterization of nanocrystalline boron nitride thin films grown by atomic layer deposition

• Published in: Thin solid films 2014-11, Vol.571, p.51-55
• Main Authors: Snure, Michael, Paduano, Qing, Hamilton, Merle, Shoaf, Jodie, Mann, J. Matthew
• Format: Article
• Language: English
• Subjects: Atomic layer deposition; Boron nitride; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystallites; Deposition; Dosage; Exact sciences and technology; Film thickness; Fourier-transform infrared spectroscopy; Infrared radiation; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nanocrystals; Nanoscale materials and structures: fabrication and characterization; Optical properties; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Other topics in nanoscale materials and structures; Physics; Raman spectroscopy; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Thin films; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2014.09.065

Boron nitride thin films were grown on sapphire and Si substrates by atomic layer deposition from triethylborane (TEB) and NH3 precursors in the temperature range of 500 to 900°C. By varying the TEB exposure the film thickness can be controlled with