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Optical characterization of nanocrystalline boron nitride thin films grown by atomic layer deposition
Boron nitride thin films were grown on sapphire and Si substrates by atomic layer deposition from triethylborane (TEB) and NH3 precursors in the temperature range of 500 to 900°C. By varying the TEB exposure the film thickness can be controlled with
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| Published in: | Thin solid films 2014-11, Vol.571, p.51-55 |
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| cites | cdi_FETCH-LOGICAL-c426t-693f4877d4e9ae9164d0614d58486a8f5e7141dbe1197e467514c22bd96142f93 |
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| container_title | Thin solid films |
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| creator | Snure, Michael Paduano, Qing Hamilton, Merle Shoaf, Jodie Mann, J. Matthew |
| description | Boron nitride thin films were grown on sapphire and Si substrates by atomic layer deposition from triethylborane (TEB) and NH3 precursors in the temperature range of 500 to 900°C. By varying the TEB exposure the film thickness can be controlled with |
| doi_str_mv | 10.1016/j.tsf.2014.09.065 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1660094892</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609014009511</els_id><sourcerecordid>1660094892</sourcerecordid><originalsourceid>FETCH-LOGICAL-c426t-693f4877d4e9ae9164d0614d58486a8f5e7141dbe1197e467514c22bd96142f93</originalsourceid><addsrcrecordid>eNp9kD1rHDEQhkVIIBfHPyCdmoCb3Yy0Wu0KV8b4I3DgJqmFThrZOvaksyQnXH59dJxx6WqKed53mIeQbwx6Bkz-2Pa1-J4DEz2oHuT4gazYPKmOTwP7SFYAAjoJCj6TL6VsAYBxPqwIPuxrsGah9slkYyvm8M_UkCJNnkYTk82HUs2yhIh0k3JbxFBzcEjrU4jUh2VX6GNOfyPdHKipaRcsXcwBM3W4TyUcy76ST94sBc9f5xn5fXvz6_q-Wz_c_by-WndWcFk7qQYv5mlyApVBxaRwIJlw4yxmaWY_4sQEcxtkTE0o5DQyYTnfONUo7tVwRi5Ovfucnl-wVL0LxeKymIjppWgmJYASs-INZSfU5lRKRq_3OexMPmgG-qhUb3VTqo9KNSjdlLbM99d6U5ozn020obwFuYJxGGFo3OWJw_brn4BZFxswWnQho63apfDOlf9NFIzG</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1660094892</pqid></control><display><type>article</type><title>Optical characterization of nanocrystalline boron nitride thin films grown by atomic layer deposition</title><source>ScienceDirect Journals</source><creator>Snure, Michael ; Paduano, Qing ; Hamilton, Merle ; Shoaf, Jodie ; Mann, J. Matthew</creator><creatorcontrib>Snure, Michael ; Paduano, Qing ; Hamilton, Merle ; Shoaf, Jodie ; Mann, J. Matthew</creatorcontrib><description>Boron nitride thin films were grown on sapphire and Si substrates by atomic layer deposition from triethylborane (TEB) and NH3 precursors in the temperature range of 500 to 900°C. By varying the TEB exposure the film thickness can be controlled with<1nm precision. At 600°C the process is self-limiting, but films are found to be amorphous. Films grown at higher temperatures were identified as sp2 BN, but the process is no longer self-limiting. From Raman and IR absorption spectroscopy films deposited at 900°C were identified as nanocrystalline sp2 BN with crystallite sizes in the range of 3 to 8nm depending on the NH3 dosage. Films deposited at lower temperatures had broad red shifted IR absorption peaks indicating the lack of long range ordering. The visible and UV optical properties of these films were characterized by UV–Vis transmission measurements over the range of 800 to 190nm. Nanocrystalline films are highly transparent over this range up to the band gap, which was measured to be in the range of 5.83 to 5.65eV depending on the NH3 dosage.
•Atomic layer deposition of BN with<1nm per cycle deposition rates•A narrow self-limiting temperature window was found.•Nanocrystalline h-BN films with a wide transparence window with Eg up to 5.85eV</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2014.09.065</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Atomic layer deposition ; Boron nitride ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Crystallites ; Deposition ; Dosage ; Exact sciences and technology ; Film thickness ; Fourier-transform infrared spectroscopy ; Infrared radiation ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Nanocrystals ; Nanoscale materials and structures: fabrication and characterization ; Optical properties ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Other topics in nanoscale materials and structures ; Physics ; Raman spectroscopy ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; Thin films ; Vapor phase epitaxy; growth from vapor phase</subject><ispartof>Thin solid films, 2014-11, Vol.571, p.51-55</ispartof><rights>2014</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c426t-693f4877d4e9ae9164d0614d58486a8f5e7141dbe1197e467514c22bd96142f93</citedby><cites>FETCH-LOGICAL-c426t-693f4877d4e9ae9164d0614d58486a8f5e7141dbe1197e467514c22bd96142f93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=29053503$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Snure, Michael</creatorcontrib><creatorcontrib>Paduano, Qing</creatorcontrib><creatorcontrib>Hamilton, Merle</creatorcontrib><creatorcontrib>Shoaf, Jodie</creatorcontrib><creatorcontrib>Mann, J. Matthew</creatorcontrib><title>Optical characterization of nanocrystalline boron nitride thin films grown by atomic layer deposition</title><title>Thin solid films</title><description>Boron nitride thin films were grown on sapphire and Si substrates by atomic layer deposition from triethylborane (TEB) and NH3 precursors in the temperature range of 500 to 900°C. By varying the TEB exposure the film thickness can be controlled with<1nm precision. At 600°C the process is self-limiting, but films are found to be amorphous. Films grown at higher temperatures were identified as sp2 BN, but the process is no longer self-limiting. From Raman and IR absorption spectroscopy films deposited at 900°C were identified as nanocrystalline sp2 BN with crystallite sizes in the range of 3 to 8nm depending on the NH3 dosage. Films deposited at lower temperatures had broad red shifted IR absorption peaks indicating the lack of long range ordering. The visible and UV optical properties of these films were characterized by UV–Vis transmission measurements over the range of 800 to 190nm. Nanocrystalline films are highly transparent over this range up to the band gap, which was measured to be in the range of 5.83 to 5.65eV depending on the NH3 dosage.
•Atomic layer deposition of BN with<1nm per cycle deposition rates•A narrow self-limiting temperature window was found.•Nanocrystalline h-BN films with a wide transparence window with Eg up to 5.85eV</description><subject>Atomic layer deposition</subject><subject>Boron nitride</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystallites</subject><subject>Deposition</subject><subject>Dosage</subject><subject>Exact sciences and technology</subject><subject>Film thickness</subject><subject>Fourier-transform infrared spectroscopy</subject><subject>Infrared radiation</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Nanocrystals</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Optical properties</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Other topics in nanoscale materials and structures</subject><subject>Physics</subject><subject>Raman spectroscopy</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>Thin films</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kD1rHDEQhkVIIBfHPyCdmoCb3Yy0Wu0KV8b4I3DgJqmFThrZOvaksyQnXH59dJxx6WqKed53mIeQbwx6Bkz-2Pa1-J4DEz2oHuT4gazYPKmOTwP7SFYAAjoJCj6TL6VsAYBxPqwIPuxrsGah9slkYyvm8M_UkCJNnkYTk82HUs2yhIh0k3JbxFBzcEjrU4jUh2VX6GNOfyPdHKipaRcsXcwBM3W4TyUcy76ST94sBc9f5xn5fXvz6_q-Wz_c_by-WndWcFk7qQYv5mlyApVBxaRwIJlw4yxmaWY_4sQEcxtkTE0o5DQyYTnfONUo7tVwRi5Ovfucnl-wVL0LxeKymIjppWgmJYASs-INZSfU5lRKRq_3OexMPmgG-qhUb3VTqo9KNSjdlLbM99d6U5ozn020obwFuYJxGGFo3OWJw_brn4BZFxswWnQho63apfDOlf9NFIzG</recordid><startdate>20141128</startdate><enddate>20141128</enddate><creator>Snure, Michael</creator><creator>Paduano, Qing</creator><creator>Hamilton, Merle</creator><creator>Shoaf, Jodie</creator><creator>Mann, J. Matthew</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20141128</creationdate><title>Optical characterization of nanocrystalline boron nitride thin films grown by atomic layer deposition</title><author>Snure, Michael ; Paduano, Qing ; Hamilton, Merle ; Shoaf, Jodie ; Mann, J. Matthew</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c426t-693f4877d4e9ae9164d0614d58486a8f5e7141dbe1197e467514c22bd96142f93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Atomic layer deposition</topic><topic>Boron nitride</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystallites</topic><topic>Deposition</topic><topic>Dosage</topic><topic>Exact sciences and technology</topic><topic>Film thickness</topic><topic>Fourier-transform infrared spectroscopy</topic><topic>Infrared radiation</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Nanocrystals</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Optical properties</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Other topics in nanoscale materials and structures</topic><topic>Physics</topic><topic>Raman spectroscopy</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><topic>Thin films</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Snure, Michael</creatorcontrib><creatorcontrib>Paduano, Qing</creatorcontrib><creatorcontrib>Hamilton, Merle</creatorcontrib><creatorcontrib>Shoaf, Jodie</creatorcontrib><creatorcontrib>Mann, J. Matthew</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Snure, Michael</au><au>Paduano, Qing</au><au>Hamilton, Merle</au><au>Shoaf, Jodie</au><au>Mann, J. Matthew</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical characterization of nanocrystalline boron nitride thin films grown by atomic layer deposition</atitle><jtitle>Thin solid films</jtitle><date>2014-11-28</date><risdate>2014</risdate><volume>571</volume><spage>51</spage><epage>55</epage><pages>51-55</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Boron nitride thin films were grown on sapphire and Si substrates by atomic layer deposition from triethylborane (TEB) and NH3 precursors in the temperature range of 500 to 900°C. By varying the TEB exposure the film thickness can be controlled with<1nm precision. At 600°C the process is self-limiting, but films are found to be amorphous. Films grown at higher temperatures were identified as sp2 BN, but the process is no longer self-limiting. From Raman and IR absorption spectroscopy films deposited at 900°C were identified as nanocrystalline sp2 BN with crystallite sizes in the range of 3 to 8nm depending on the NH3 dosage. Films deposited at lower temperatures had broad red shifted IR absorption peaks indicating the lack of long range ordering. The visible and UV optical properties of these films were characterized by UV–Vis transmission measurements over the range of 800 to 190nm. Nanocrystalline films are highly transparent over this range up to the band gap, which was measured to be in the range of 5.83 to 5.65eV depending on the NH3 dosage.
•Atomic layer deposition of BN with<1nm per cycle deposition rates•A narrow self-limiting temperature window was found.•Nanocrystalline h-BN films with a wide transparence window with Eg up to 5.85eV</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2014.09.065</doi><tpages>5</tpages></addata></record> |
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| subjects | Atomic layer deposition Boron nitride Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystallites Deposition Dosage Exact sciences and technology Film thickness Fourier-transform infrared spectroscopy Infrared radiation Materials science Methods of deposition of films and coatings film growth and epitaxy Nanocrystals Nanoscale materials and structures: fabrication and characterization Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Other topics in nanoscale materials and structures Physics Raman spectroscopy Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Thin films Vapor phase epitaxy growth from vapor phase |
| title | Optical characterization of nanocrystalline boron nitride thin films grown by atomic layer deposition |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T22%3A16%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Optical%20characterization%20of%20nanocrystalline%20boron%20nitride%20thin%20films%20grown%20by%20atomic%20layer%20deposition&rft.jtitle=Thin%20solid%20films&rft.au=Snure,%20Michael&rft.date=2014-11-28&rft.volume=571&rft.spage=51&rft.epage=55&rft.pages=51-55&rft.issn=0040-6090&rft.eissn=1879-2731&rft.coden=THSFAP&rft_id=info:doi/10.1016/j.tsf.2014.09.065&rft_dat=%3Cproquest_cross%3E1660094892%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c426t-693f4877d4e9ae9164d0614d58486a8f5e7141dbe1197e467514c22bd96142f93%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1660094892&rft_id=info:pmid/&rfr_iscdi=true |