MoO3 trapping layers with CF4 plasma treatment in flash memory applications

•MoO3-based flash memories have been fabricated.•CF4 plasma treatment could enhance good memory performance.•Material analyses confirm that plasma treatment eliminated defects.•Fluorine atoms might fix the dangling bonds. In this research, we used MoO3 with CF4 plasma treatment as charge trapping la...

Full description

Saved in:
Bibliographic Details
Published in:Applied surface science 2014-11, Vol.320, p.379-382
Main Authors: Kao, Chuyan Haur, Chen, Hsiang, Chen, Su-Zhien, Chen, Chian Yu, Lo, Kuang-Yu, Lin, Chun Han
Format: Article
Language:English
Subjects:
CF4 plasma
Charge
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Crystallization
Defects
Density
Electric charge
Exact sciences and technology
Flash memory (computers)
Fluorine atom
Interface
Leakage current
MoO3 memory
Performance enhancement
Physics
Trapping
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:•MoO3-based flash memories have been fabricated.•CF4 plasma treatment could enhance good memory performance.•Material analyses confirm that plasma treatment eliminated defects.•Fluorine atoms might fix the dangling bonds. In this research, we used MoO3 with CF4 plasma treatment as charge trapping layer in metal-oxide-high-k -oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO3 charge trapping layer memory with suitable CF4 plasma treatment is promising for future nonvolatile memory applications.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2014.09.051