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MoO3 trapping layers with CF4 plasma treatment in flash memory applications
•MoO3-based flash memories have been fabricated.•CF4 plasma treatment could enhance good memory performance.•Material analyses confirm that plasma treatment eliminated defects.•Fluorine atoms might fix the dangling bonds. In this research, we used MoO3 with CF4 plasma treatment as charge trapping la...
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| Published in: | Applied surface science 2014-11, Vol.320, p.379-382 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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| container_end_page | 382 |
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| container_start_page | 379 |
| container_title | Applied surface science |
| container_volume | 320 |
| creator | Kao, Chuyan Haur Chen, Hsiang Chen, Su-Zhien Chen, Chian Yu Lo, Kuang-Yu Lin, Chun Han |
| description | •MoO3-based flash memories have been fabricated.•CF4 plasma treatment could enhance good memory performance.•Material analyses confirm that plasma treatment eliminated defects.•Fluorine atoms might fix the dangling bonds.
In this research, we used MoO3 with CF4 plasma treatment as charge trapping layer in metal-oxide-high-k -oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO3 charge trapping layer memory with suitable CF4 plasma treatment is promising for future nonvolatile memory applications. |
| doi_str_mv | 10.1016/j.apsusc.2014.09.051 |
| format | article |
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In this research, we used MoO3 with CF4 plasma treatment as charge trapping layer in metal-oxide-high-k -oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO3 charge trapping layer memory with suitable CF4 plasma treatment is promising for future nonvolatile memory applications.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2014.09.051</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>CF4 plasma ; Charge ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Crystallization ; Defects ; Density ; Electric charge ; Exact sciences and technology ; Flash memory (computers) ; Fluorine atom ; Interface ; Leakage current ; MoO3 memory ; Performance enhancement ; Physics ; Trapping</subject><ispartof>Applied surface science, 2014-11, Vol.320, p.379-382</ispartof><rights>2014 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=29026010$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kao, Chuyan Haur</creatorcontrib><creatorcontrib>Chen, Hsiang</creatorcontrib><creatorcontrib>Chen, Su-Zhien</creatorcontrib><creatorcontrib>Chen, Chian Yu</creatorcontrib><creatorcontrib>Lo, Kuang-Yu</creatorcontrib><creatorcontrib>Lin, Chun Han</creatorcontrib><title>MoO3 trapping layers with CF4 plasma treatment in flash memory applications</title><title>Applied surface science</title><description>•MoO3-based flash memories have been fabricated.•CF4 plasma treatment could enhance good memory performance.•Material analyses confirm that plasma treatment eliminated defects.•Fluorine atoms might fix the dangling bonds.
In this research, we used MoO3 with CF4 plasma treatment as charge trapping layer in metal-oxide-high-k -oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO3 charge trapping layer memory with suitable CF4 plasma treatment is promising for future nonvolatile memory applications.</description><subject>CF4 plasma</subject><subject>Charge</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystallization</subject><subject>Defects</subject><subject>Density</subject><subject>Electric charge</subject><subject>Exact sciences and technology</subject><subject>Flash memory (computers)</subject><subject>Fluorine atom</subject><subject>Interface</subject><subject>Leakage current</subject><subject>MoO3 memory</subject><subject>Performance enhancement</subject><subject>Physics</subject><subject>Trapping</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkE1LAzEQhoMoWKv_wEMugpdd87Gb3b0IUqyKlV70HMbsxKbsl0mq9N-bUk8D8z4zvDyEXHOWc8bV3TaHKeyCyQXjRc6anJX8hMx4XcmsLOvilMwS1mSFlOKcXISwZYyLlM7I69u4ljR6mCY3fNEO9ugD_XVxQxfLgk4dhB5SjhB7HCJ1A7Vpt6E99qPf03TXOQPRjUO4JGcWuoBX_3NOPpaP74vnbLV-elk8rDIUTMYMRGMYCFXLVK1swfIGeYs1YGNtW1irlCpsJUpuKiOtVMa21WcJqrW2qpSVc3J7_Dv58XuHIereBYNdBwOOu6C5Uow1ZVGLhN78oxAMdNbDYFzQk3c9-L0WDROKcZa4-yOHqfePQ6-DcTgYbJ1HE3U7Os2ZPtjWW320rQ-2NWt0si3_AE0adhY</recordid><startdate>20141130</startdate><enddate>20141130</enddate><creator>Kao, Chuyan Haur</creator><creator>Chen, Hsiang</creator><creator>Chen, Su-Zhien</creator><creator>Chen, Chian Yu</creator><creator>Lo, Kuang-Yu</creator><creator>Lin, Chun Han</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20141130</creationdate><title>MoO3 trapping layers with CF4 plasma treatment in flash memory applications</title><author>Kao, Chuyan Haur ; Chen, Hsiang ; Chen, Su-Zhien ; Chen, Chian Yu ; Lo, Kuang-Yu ; Lin, Chun Han</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-e203t-a29c0a26835845daf19e1de8ae9ffd4ff6664f7251c7c3f36cfd7b5a6dff776f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>CF4 plasma</topic><topic>Charge</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystallization</topic><topic>Defects</topic><topic>Density</topic><topic>Electric charge</topic><topic>Exact sciences and technology</topic><topic>Flash memory (computers)</topic><topic>Fluorine atom</topic><topic>Interface</topic><topic>Leakage current</topic><topic>MoO3 memory</topic><topic>Performance enhancement</topic><topic>Physics</topic><topic>Trapping</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kao, Chuyan Haur</creatorcontrib><creatorcontrib>Chen, Hsiang</creatorcontrib><creatorcontrib>Chen, Su-Zhien</creatorcontrib><creatorcontrib>Chen, Chian Yu</creatorcontrib><creatorcontrib>Lo, Kuang-Yu</creatorcontrib><creatorcontrib>Lin, Chun Han</creatorcontrib><collection>Pascal-Francis</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kao, Chuyan Haur</au><au>Chen, Hsiang</au><au>Chen, Su-Zhien</au><au>Chen, Chian Yu</au><au>Lo, Kuang-Yu</au><au>Lin, Chun Han</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>MoO3 trapping layers with CF4 plasma treatment in flash memory applications</atitle><jtitle>Applied surface science</jtitle><date>2014-11-30</date><risdate>2014</risdate><volume>320</volume><spage>379</spage><epage>382</epage><pages>379-382</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>•MoO3-based flash memories have been fabricated.•CF4 plasma treatment could enhance good memory performance.•Material analyses confirm that plasma treatment eliminated defects.•Fluorine atoms might fix the dangling bonds.
In this research, we used MoO3 with CF4 plasma treatment as charge trapping layer in metal-oxide-high-k -oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO3 charge trapping layer memory with suitable CF4 plasma treatment is promising for future nonvolatile memory applications.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2014.09.051</doi><tpages>4</tpages></addata></record> |
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| ispartof | Applied surface science, 2014-11, Vol.320, p.379-382 |
| issn | 0169-4332 1873-5584 |
| language | eng |
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| source | ScienceDirect Journals |
| subjects | CF4 plasma Charge Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystallization Defects Density Electric charge Exact sciences and technology Flash memory (computers) Fluorine atom Interface Leakage current MoO3 memory Performance enhancement Physics Trapping |
| title | MoO3 trapping layers with CF4 plasma treatment in flash memory applications |
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