Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates

We report on the performance and the characterization of top-gate organic field-effect transistors (OFETs), comprising a bilayer gate dielectric of CYTOP/Al2O3 and a solution-processed semiconductor layer made of a blend of TIPS-pentacene:PTAA, fabricated on recyclable cellulose nanocrystal–glycerol...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2015-03, Vol.7 (8), p.4804-4808
Main Authors: Wang, Cheng-Yin, Fuentes-Hernandez, Canek, Liu, Jen-Chieh, Dindar, Amir, Choi, Sangmoo, Youngblood, Jeffrey P, Moon, Robert J, Kippelen, Bernard
Format: Article
Language:English
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Summary:We report on the performance and the characterization of top-gate organic field-effect transistors (OFETs), comprising a bilayer gate dielectric of CYTOP/Al2O3 and a solution-processed semiconductor layer made of a blend of TIPS-pentacene:PTAA, fabricated on recyclable cellulose nanocrystal–glycerol (CNC/glycerol) substrates. These OFETs exhibit low operating voltage, low threshold voltage, an average field-effect mobility of 0.11 cm2/(V s), and good shelf and operational stability in ambient conditions. To improve the operational stability in ambient a passivation layer of Al2O3 is grown by atomic layer deposition (ALD) directly onto the CNC/glycerol substrates. This layer protects the organic semiconductor layer from moisture and other chemicals that can either permeate through or diffuse out of the substrate.
ISSN:1944-8244
1944-8252
DOI:10.1021/am508723a