CuSbS2-Sensitized Inorganic-Organic Heterojunction Solar Cells Fabricated Using a Metal-Thiourea Complex Solution

• Published in: Angewandte Chemie International Edition 2015-03, Vol.54 (13), p.4005-4009
• Main Authors: Choi, Yong Chan, Yeom, Eun Joo, Ahn, Tae Kyu, Seok, Sang Il
• Format: Article
• Language: English
• Subjects: antimony; copper; sensitizers; solar cells; thiourea
• ISSN: 1433-7851; 1521-3773
• DOI: 10.1002/anie.201411329

The device performance of sensitizer‐architecture solar cells based on a CuSbS2 light sensitizer is presented. The device consists of F‐doped SnO2 substrate/TiO2 blocking layer/mesoporous TiO2/CuSbS2/hole‐transporting material/Au electrode. The CuSbS2 was deposited by repeated cycles of spin coating of a Cu‐Sb‐thiourea complex solution and thermal decomposition, followed by annealing in Ar at 500 °C. Poly(2,6‐(4,4‐bis‐(2‐ethylhexyl)‐4H‐cyclopenta[2,1‐b;3,4‐b′]dithiophene)‐alt‐4,7(2,1,3‐benzothiadiazole)) (PCPDTBT) was used as the hole‐transporting material. The best‐performing cell exhibited a 3.1 % device efficiency, with a short‐circuit current density of 21.5 mA cm−2, an open‐circuit voltage of 304 mV, and a fill factor of 46.8 %. Ternary CuSbS2‐sensitized inorganic–organic heterojunction solar cells can be assembled with an efficiency of 3.12 %. The CuSbS2 is simply deposited on a F‐doped SnO2 substrate/TiO2 blocking layer/mesoporous TiO2/CuSbS2/hole‐transporting material (HTM)/Au electrode by processing with a Cu–Sb–thiourea complex (yellow solution in picture). The highest photocurrent is 21.5 mA cm−2 under standard AM 1.5 G conditions.