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Au/p-Si Schottky junction solar cell: Effect of barrier height modification by InP quantum dots
In a Schottky junction solar cell, the barrier height plays an important role in determining various cell parameters. In this study, we have modified the Schottky barrier height by growing InP quantum dots in-situ on (100) p-Si by metal organic chemical vapor deposition technique. It is observed tha...
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Published in: | Solar energy materials and solar cells 2015-01, Vol.132, p.230-236 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In a Schottky junction solar cell, the barrier height plays an important role in determining various cell parameters. In this study, we have modified the Schottky barrier height by growing InP quantum dots in-situ on (100) p-Si by metal organic chemical vapor deposition technique. It is observed that the barrier height depends on the size and shape of the nanostructures. The shape of the grown nanostructures is determined by atomic force microscopy and cross sectional transmission electron microscopy. Presence of parabolic and flat plateau like structures rather than spherical was observed and analyzed. Under 1-sun AM 1.5, the device with a barrier height of 0.71eV, is found to show a conversion efficiency of 3.89% with open circuit voltage of 0.51V and short circuit current density of 13.29mA/cm2. This is an increase of 2.82% compared to control devices where no nanostructuring is used to modify the barrier height.
The Schottky barrier height of Au/p-Si has been modified in-situ by growing InP quantum dots on (100) p-Si by metal organic chemical vapor deposition technique. Under 1-sun AM 1.5, conversion efficiency is found 2.82% higher than that of a control cell where no nano-structuring is used to modify the barrier height. [Display omitted]
•Schottky barrier height of a Au/p-Si solar cell is modified.•Modification is done in-situ using InP nano-structures.•The nano-structures are grown by the MOCVD technique at different temperatures.•The barrier height is found to depend on shape and size of the quantum dots.•The quantum efficiency is found to increase compared to unmodified cells. |
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ISSN: | 0927-0248 1879-3398 |
DOI: | 10.1016/j.solmat.2014.08.035 |