Investigation on dispersive optical constants and microstructural parameters of the absorber CuSbS sub(2) thin films

In this work, the thermal annealing effects on the microstructural, optical constants and electrical properties of as-grown vacuum evaporated CuSbS sub(2) thin films have been investigated. The annealing temperatures in vacuum were varied in the range 100-220 degree C. CuSbS sub(2) thin films were d...

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Bibliographic Details
Published in:Vacuum 2015-02, Vol.112, p.59-65
Main Authors: Rabhi, A, Fadhli, Y, Kanzari, M
Format: Article
Language:English
Subjects:
Annealing
Constants
Dispersions
Electrical properties
Mathematical models
Microstructure
Resistivity
Semiconductors
Thin films
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Summary:In this work, the thermal annealing effects on the microstructural, optical constants and electrical properties of as-grown vacuum evaporated CuSbS sub(2) thin films have been investigated. The annealing temperatures in vacuum were varied in the range 100-220 degree C. CuSbS sub(2) thin films were deposited on heated glass substrates. These films were characterized for their structural, optical and electrical properties using X-ray diffraction (XRD), optical measurement and hot probe method. The lattice parameters, crystal strain epsilon and dislocation density delta are calculated. The optical constants of the elaborated films were determined, in the spectral range 300-1800 nm. The values of the optical band gap energy ranged between 1.39 and 1.75 eV. The dispersion of the refractive index and extinction coefficient in the infrared region are adequately explained using a single oscillator model. The different values of the dispersion energy E sub(d), the oscillator energy E sub(0), the high frequency dielectric constant and the ratio of the carrier concentration to the effective mass were estimated according to the models of Spitzer-Fan and Wemple super(_)DiDomenico. The electrical conductivity measurements suggest that obtained films show 'mineral materials' behavior with conductivity of 10 super(-4) Omega super(-1) cm super(-1). The annealed layers exhibit an obvious p super(_)type semiconductor.
ISSN:0042-207X
DOI:10.1016/j.vacuum.2014.11.017