Growth and characterization of Mg sub(x)Zn sub(1-x)O films grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

• Published in: Journal of alloys and compounds 2015-02, Vol.623, p.1-6
• Main Authors: Han, Seok Kyu, Lee, Hyo Sung, Kim, Dong-Yeob, Hong, Soon-Ku, Ahn, Byung Jun, Song, Jung-Hoon, Jeong, Myoungho, Lee, Ju Ho, Lee, Jeong Yong, Yao, Takafumi
• Format: Article
• Language: English
• Subjects: Alloys; Formations; Magnesium; Magnesium oxide; Molecular beam epitaxy; Optical properties; Photoluminescence; Reflection; Sapphire
• ISSN: 0925-8388
• DOI: 10.1016/j.jallcom.2014.10.075

We report on the structural and optical properties of non polar a-plane Mg sub(x)Zn sub(1-x)O (0 [< or =, slant] x [< or =, slant] 0.57) films on r-plane sapphire substrates grown by plasma-assisted molecular beam epitaxy. Reflection high energy electron diffraction (RHEED) revealed a formation of cubic MgO phase when an Mg concentration increases. Room temperature (RT) photoluminescence (PL) and transmission electron microscopy consistently revealed the formation of cubic MgO phase from the Mg sub(0.21)Zn sub(0.79)O film. The Mg sub(0.11)Zn sub(0.89)O film showed a band edge emission at ~360 nm, which is a shorter wavelength than the ZnO (~373 nm), from the RT PL measurements. Photoluminescence excitation (PLE) measurements at RT showed that band-gap energies of Mg sub(x)Zn sub(1-x)O films could be tuned up to ~4.65 eV (~270 nm) although cubic MgO phase were mixed for high Mg concentration. For the single phase wurtzite MgZnO film, band-gap energy of 3.48 eV was obtained from the Mg sub(0.11)Zn sub(0.89)O film.