High EMI Resistivity CMOS Operational Amplifier

In this paper a high resistant EMI interference CMOS operational amplifier has been designed and simulated. It is designed by implementing easy modification of the differential pair with active current load. The power amplifier seems to be leading the output voltage power with respect to the input s...

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Bibliographic Details
Published in:International journal of computer applications 2015-01, Vol.111 (1), p.27-30
Main Authors: Sharma, Lavlesh, Akashe, Shyam
Format: Article
Language:English
Subjects:
CMOS
Computer simulation
Electric potential
Electrical resistivity
Electromagnetic interference
Gain
Operational amplifiers
Power amplifiers
Voltage
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Summary:In this paper a high resistant EMI interference CMOS operational amplifier has been designed and simulated. It is designed by implementing easy modification of the differential pair with active current load. The power amplifier seems to be leading the output voltage power with respect to the input supply given, the two stage power amplifier was designed in this current technology and results are noted below. CMOS power amplifier is a type of power amplifier designed by using CMOS transistors connected together and get the output gain of amplifier . The desired input stage can be produce using standard CMOS technologies, and it also does not requires extra levels of masking process, such as triple well, nor external components are required. Analysis and results have been provided for very large interferences, which arise from the input pin and result produced are noted precisely.
ISSN:0975-8887
0975-8887
DOI:10.5120/19503-1100