High EMI Resistivity CMOS Operational Amplifier

In this paper a high resistant EMI interference CMOS operational amplifier has been designed and simulated. It is designed by implementing easy modification of the differential pair with active current load. The power amplifier seems to be leading the output voltage power with respect to the input s...

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Published in:International journal of computer applications 2015-01, Vol.111 (1), p.27-30
Main Authors: Sharma, Lavlesh, Akashe, Shyam
Format: Article
Language:English
Subjects:
CMOS
Computer simulation
Electric potential
Electrical resistivity
Electromagnetic interference
Gain
Operational amplifiers
Power amplifiers
Voltage
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Akashe, Shyam
description In this paper a high resistant EMI interference CMOS operational amplifier has been designed and simulated. It is designed by implementing easy modification of the differential pair with active current load. The power amplifier seems to be leading the output voltage power with respect to the input supply given, the two stage power amplifier was designed in this current technology and results are noted below. CMOS power amplifier is a type of power amplifier designed by using CMOS transistors connected together and get the output gain of amplifier . The desired input stage can be produce using standard CMOS technologies, and it also does not requires extra levels of masking process, such as triple well, nor external components are required. Analysis and results have been provided for very large interferences, which arise from the input pin and result produced are noted precisely.
doi_str_mv 10.5120/19503-1100
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1669862846</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3594577211</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1320-d0614b48b70226bef0b9925b97af31b99bebcd14cbca3e27f058c23758cf754e3</originalsourceid><addsrcrecordid>eNpdkMtKAzEUhoMoWGo3PsGAGxHG5jK5LUupbaFlwMs6JGmiKTOdMZkKfXtnrAvxLP7zLz4Ohw-AWwQfKcJwiiSFJEcIwgswgpLTXAjBL__0azBJaQ_7IRIzWYzAdBXeP7LFdp09uxRSF75Cd8rm2_IlK1sXdReag66yWd1WwQcXb8CV11Vyk989Bm9Pi9f5Kt-Uy_V8tsktIhjmO8hQYQphOMSYGeehkRJTI7n2BPXdOGN3qLDGauIw95AKiwnv03NaODIG9-e7bWw-jy51qg7JuqrSB9cck0KMScGwKFiP3v1D980x9l8PFKWcI0EG6uFM2dikFJ1XbQy1jieFoBr0qR99atBHvgERa15v</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1655771836</pqid></control><display><type>article</type><title>High EMI Resistivity CMOS Operational Amplifier</title><source>Freely Accessible Journals</source><creator>Sharma, Lavlesh ; Akashe, Shyam</creator><creatorcontrib>Sharma, Lavlesh ; Akashe, Shyam</creatorcontrib><description>In this paper a high resistant EMI interference CMOS operational amplifier has been designed and simulated. It is designed by implementing easy modification of the differential pair with active current load. The power amplifier seems to be leading the output voltage power with respect to the input supply given, the two stage power amplifier was designed in this current technology and results are noted below. CMOS power amplifier is a type of power amplifier designed by using CMOS transistors connected together and get the output gain of amplifier . The desired input stage can be produce using standard CMOS technologies, and it also does not requires extra levels of masking process, such as triple well, nor external components are required. Analysis and results have been provided for very large interferences, which arise from the input pin and result produced are noted precisely.</description><identifier>ISSN: 0975-8887</identifier><identifier>EISSN: 0975-8887</identifier><identifier>DOI: 10.5120/19503-1100</identifier><language>eng</language><publisher>New York: Foundation of Computer Science</publisher><subject>CMOS ; Computer simulation ; Electric potential ; Electrical resistivity ; Electromagnetic interference ; Gain ; Operational amplifiers ; Power amplifiers ; Voltage</subject><ispartof>International journal of computer applications, 2015-01, Vol.111 (1), p.27-30</ispartof><rights>Copyright Foundation of Computer Science 2015</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Sharma, Lavlesh</creatorcontrib><creatorcontrib>Akashe, Shyam</creatorcontrib><title>High EMI Resistivity CMOS Operational Amplifier</title><title>International journal of computer applications</title><description>In this paper a high resistant EMI interference CMOS operational amplifier has been designed and simulated. It is designed by implementing easy modification of the differential pair with active current load. The power amplifier seems to be leading the output voltage power with respect to the input supply given, the two stage power amplifier was designed in this current technology and results are noted below. CMOS power amplifier is a type of power amplifier designed by using CMOS transistors connected together and get the output gain of amplifier . The desired input stage can be produce using standard CMOS technologies, and it also does not requires extra levels of masking process, such as triple well, nor external components are required. Analysis and results have been provided for very large interferences, which arise from the input pin and result produced are noted precisely.</description><subject>CMOS</subject><subject>Computer simulation</subject><subject>Electric potential</subject><subject>Electrical resistivity</subject><subject>Electromagnetic interference</subject><subject>Gain</subject><subject>Operational amplifiers</subject><subject>Power amplifiers</subject><subject>Voltage</subject><issn>0975-8887</issn><issn>0975-8887</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpdkMtKAzEUhoMoWGo3PsGAGxHG5jK5LUupbaFlwMs6JGmiKTOdMZkKfXtnrAvxLP7zLz4Ohw-AWwQfKcJwiiSFJEcIwgswgpLTXAjBL__0azBJaQ_7IRIzWYzAdBXeP7LFdp09uxRSF75Cd8rm2_IlK1sXdReag66yWd1WwQcXb8CV11Vyk989Bm9Pi9f5Kt-Uy_V8tsktIhjmO8hQYQphOMSYGeehkRJTI7n2BPXdOGN3qLDGauIw95AKiwnv03NaODIG9-e7bWw-jy51qg7JuqrSB9cck0KMScGwKFiP3v1D980x9l8PFKWcI0EG6uFM2dikFJ1XbQy1jieFoBr0qR99atBHvgERa15v</recordid><startdate>20150101</startdate><enddate>20150101</enddate><creator>Sharma, Lavlesh</creator><creator>Akashe, Shyam</creator><general>Foundation of Computer Science</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>7SP</scope></search><sort><creationdate>20150101</creationdate><title>High EMI Resistivity CMOS Operational Amplifier</title><author>Sharma, Lavlesh ; Akashe, Shyam</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1320-d0614b48b70226bef0b9925b97af31b99bebcd14cbca3e27f058c23758cf754e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>CMOS</topic><topic>Computer simulation</topic><topic>Electric potential</topic><topic>Electrical resistivity</topic><topic>Electromagnetic interference</topic><topic>Gain</topic><topic>Operational amplifiers</topic><topic>Power amplifiers</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Sharma, Lavlesh</creatorcontrib><creatorcontrib>Akashe, Shyam</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Electronics &amp; Communications Abstracts</collection><jtitle>International journal of computer applications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sharma, Lavlesh</au><au>Akashe, Shyam</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High EMI Resistivity CMOS Operational Amplifier</atitle><jtitle>International journal of computer applications</jtitle><date>2015-01-01</date><risdate>2015</risdate><volume>111</volume><issue>1</issue><spage>27</spage><epage>30</epage><pages>27-30</pages><issn>0975-8887</issn><eissn>0975-8887</eissn><abstract>In this paper a high resistant EMI interference CMOS operational amplifier has been designed and simulated. It is designed by implementing easy modification of the differential pair with active current load. The power amplifier seems to be leading the output voltage power with respect to the input supply given, the two stage power amplifier was designed in this current technology and results are noted below. CMOS power amplifier is a type of power amplifier designed by using CMOS transistors connected together and get the output gain of amplifier . The desired input stage can be produce using standard CMOS technologies, and it also does not requires extra levels of masking process, such as triple well, nor external components are required. Analysis and results have been provided for very large interferences, which arise from the input pin and result produced are noted precisely.</abstract><cop>New York</cop><pub>Foundation of Computer Science</pub><doi>10.5120/19503-1100</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record>
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subjects CMOS
Computer simulation
Electric potential
Electrical resistivity
Electromagnetic interference
Gain
Operational amplifiers
Power amplifiers
Voltage
title High EMI Resistivity CMOS Operational Amplifier
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T20%3A30%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20EMI%20Resistivity%20CMOS%20Operational%20Amplifier&rft.jtitle=International%20journal%20of%20computer%20applications&rft.au=Sharma,%20Lavlesh&rft.date=2015-01-01&rft.volume=111&rft.issue=1&rft.spage=27&rft.epage=30&rft.pages=27-30&rft.issn=0975-8887&rft.eissn=0975-8887&rft_id=info:doi/10.5120/19503-1100&rft_dat=%3Cproquest_cross%3E3594577211%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c1320-d0614b48b70226bef0b9925b97af31b99bebcd14cbca3e27f058c23758cf754e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1655771836&rft_id=info:pmid/&rfr_iscdi=true