Ultraviolet random lasing from Mg sub(0.12)Zn sub(0.88)O:N/ZnO:Ga single-heterostructure diode

A heterostructure device consisting of nitrogen-doped Mg sub(0.12)Zn sub(0.88)O and gallium-doped ZnO thin films was grown on c-plane sapphire substrate using RF plasma-assisted molecular beam epitaxy. Current-voltage and photocurrent characteristics indicate the formation of a p-n junction. Random...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2015-03, Vol.118 (3), p.817-821
Main Authors: Morshed, Muhammad M, Zuo, Zheng, Huang, Jian, Liu, Jianlin
Format: Article
Language:English
Subjects:
Columnar structure
Devices
Lasing
Light scattering
Materials science
Photocurrent
Photoelectric effect
Ultraviolet
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Summary:A heterostructure device consisting of nitrogen-doped Mg sub(0.12)Zn sub(0.88)O and gallium-doped ZnO thin films was grown on c-plane sapphire substrate using RF plasma-assisted molecular beam epitaxy. Current-voltage and photocurrent characteristics indicate the formation of a p-n junction. Random lasing behavior with lasing modes centered at 356 nm was observed. A low-threshold current of 6 mA was determined, and an output power of 34 nW was measured at an injection current of 8 mA. The film contains columnar structures with much air gaps, which assist in light scattering to achieve necessary gain for random lasing.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-014-8804-6