AgBiS sub(2) single crystal grown using slow cooling method and its characterization

Silver bismuth sulfide (AgBiS sub(2)) single crystal was successfully grown using the slow cooling method. Characterization of a grown crystal using power X-ray diffraction (XRD) revealed a single AgBiS sub(2) phase and a cubic structure with lattice parameter a = 5.641 A. The crystal was found to h...

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Bibliographic Details
Published in:Journal of crystal growth 2015-02, Vol.411, p.1-3
Main Authors: Nakamura, Masam, Nakamura, Hiroaki, Ohsawa, Takeo, Imura, Masataka, Shimamura, Kiyoshi, Ohashi, Naoki
Format: Article
Language:English
Subjects:
Carrier density
Cooling
Crystal lattices
Crystal structure
Crystals
Cubic lattice
Single crystals
X-ray diffraction
X-rays
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Summary:Silver bismuth sulfide (AgBiS sub(2)) single crystal was successfully grown using the slow cooling method. Characterization of a grown crystal using power X-ray diffraction (XRD) revealed a single AgBiS sub(2) phase and a cubic structure with lattice parameter a = 5.641 A. The crystal was found to have a high-temperature phase with a cubic structure. XRD measurement and composition analysis showed that the stoichiometric composition of the AgBiS sub(2) was equivalent to the congruent melt composition. The grown AgBiS sub(2) crystal was confirmed to be single crystal by observing the Laue X-ray backscattering pattern. Differential thermal analysis showed that the melting point of the AgBiS sub(2) was 805 [degrees]C. The grown crystal had n-type conductivity, a carrier concentration of 2.6 x 10 super(18) cm super(-3), electrical resistivity of 2.1 [Omega] cm, and hole mobility of 1.1 cm super(2)/V s at room temperature.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2014.10.042