DLTFS Investigation of Ingaasn/Gaas Tandem Solar Cell

In this paper authors present the results of identification of emission and capture processes in tandem solar cell structures based on quaternary InGaAsN semiconductor alloys by DLTFS (Deep Level Transient Fourier Spectroscopy) and by ana- lytical evaluation processes. The energies of five trap leve...

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Bibliographic Details
Published in:Journal of Electrical Engineering 2014-09, Vol.65 (5), p.271-276
Main Authors: Kósa, Arád, Stuchlíková, L’ubica, Dawidowski, Wojciech, Jakuš, Juraj, Sciana, Beata, Radziewicz, Damian, Pucicki, Damian, Harmatha, Ladislav, Kováč, Jaroslav, Tłaczala, Marek
Format: Article
Language:English
Subjects:
Alloys
deep energy levels
deep level transient Fourier spectroscopy
Fourier analysis
Gallium arsenide
Gallium arsenides
Mathematical analysis
Photovoltaic cells
Semiconductors
Solar cells
tandem solar cell
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Summary:In this paper authors present the results of identification of emission and capture processes in tandem solar cell structures based on quaternary InGaAsN semiconductor alloys by DLTFS (Deep Level Transient Fourier Spectroscopy) and by ana- lytical evaluation processes. The energies of five trap levels ET1=0.77 eV, ET2=0.47 eV, ET3=0.64 eV, HT1=0.62 eV and HT2=0.53 eV were identified with reliable accuracy. These values were obtained by available analytical procedures, verified by simulations and confirmed by reference structures with basic layer types and compared with possible reference trap data. Native structural defects in GaAs were stated as the origin of these deep energy levels
ISSN:1339-309X
1335-3632
1339-309X
DOI:10.2478/jee-2014-0043