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DLTFS Investigation of Ingaasn/Gaas Tandem Solar Cell
In this paper authors present the results of identification of emission and capture processes in tandem solar cell structures based on quaternary InGaAsN semiconductor alloys by DLTFS (Deep Level Transient Fourier Spectroscopy) and by ana- lytical evaluation processes. The energies of five trap leve...
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Published in: | Journal of Electrical Engineering 2014-09, Vol.65 (5), p.271-276 |
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creator | Kósa, Arád Stuchlíková, L’ubica Dawidowski, Wojciech Jakuš, Juraj Sciana, Beata Radziewicz, Damian Pucicki, Damian Harmatha, Ladislav Kováč, Jaroslav Tłaczala, Marek |
description | In this paper authors present the results of identification of emission and capture processes in tandem solar cell structures based on quaternary InGaAsN semiconductor alloys by DLTFS (Deep Level Transient Fourier Spectroscopy) and by ana- lytical evaluation processes. The energies of five trap levels ET1=0.77 eV, ET2=0.47 eV, ET3=0.64 eV, HT1=0.62 eV and HT2=0.53 eV were identified with reliable accuracy. These values were obtained by available analytical procedures, verified by simulations and confirmed by reference structures with basic layer types and compared with possible reference trap data. Native structural defects in GaAs were stated as the origin of these deep energy levels |
doi_str_mv | 10.2478/jee-2014-0043 |
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Native structural defects in GaAs were stated as the origin of these deep energy levels</description><subject>Alloys</subject><subject>deep energy levels</subject><subject>deep level transient Fourier spectroscopy</subject><subject>Fourier analysis</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Mathematical analysis</subject><subject>Photovoltaic cells</subject><subject>Semiconductors</subject><subject>Solar cells</subject><subject>tandem solar cell</subject><issn>1339-309X</issn><issn>1335-3632</issn><issn>1339-309X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><recordid>eNptkMFLwzAUxoMoOOqO3gtevMQl7zVpgyeZbg4GHjbBW0jbdHR07UxaZf-9GfMwxMt7H4_f-_j4CLnl7AGSNJtsraXAeEIZS_CCjDiiosjUx-WZviZj77eMBU5BwuSIiOfleraKF-2X9X29MX3dtXFXhcPGGN9O5mHGa9OWdhevusa4eGqb5oZcVabxdvy7I_I-e1lPX-nybb6YPi1pgZnqKeS5ApQKweTIy0wUGeYlNymwxNgKgDMJCKmqyqRCidYKIVUqjZB5gqLEiNyffPeu-xxCQr2rfRECmNZ2g9dcSpVlnAeXiNz9Qbfd4NqQLlAgAFQgA0VPVOE6752t9N7VO-MOmjN97FGHHvWxR33sMfCPJ_7bNL11pd244RDEmfl_f1IISDn-AC9IdXo</recordid><startdate>20140901</startdate><enddate>20140901</enddate><creator>Kósa, Arád</creator><creator>Stuchlíková, L’ubica</creator><creator>Dawidowski, Wojciech</creator><creator>Jakuš, Juraj</creator><creator>Sciana, Beata</creator><creator>Radziewicz, Damian</creator><creator>Pucicki, Damian</creator><creator>Harmatha, Ladislav</creator><creator>Kováč, Jaroslav</creator><creator>Tłaczala, Marek</creator><general>De Gruyter Open</general><general>De Gruyter Poland</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>L7M</scope><scope>M7S</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7QQ</scope><scope>JG9</scope></search><sort><creationdate>20140901</creationdate><title>DLTFS Investigation of Ingaasn/Gaas Tandem Solar Cell</title><author>Kósa, Arád ; 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The energies of five trap levels ET1=0.77 eV, ET2=0.47 eV, ET3=0.64 eV, HT1=0.62 eV and HT2=0.53 eV were identified with reliable accuracy. These values were obtained by available analytical procedures, verified by simulations and confirmed by reference structures with basic layer types and compared with possible reference trap data. Native structural defects in GaAs were stated as the origin of these deep energy levels</abstract><cop>Bratislava</cop><pub>De Gruyter Open</pub><doi>10.2478/jee-2014-0043</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Alloys deep energy levels deep level transient Fourier spectroscopy Fourier analysis Gallium arsenide Gallium arsenides Mathematical analysis Photovoltaic cells Semiconductors Solar cells tandem solar cell |
title | DLTFS Investigation of Ingaasn/Gaas Tandem Solar Cell |
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