Far Field Measurements of Phc Led Prepared by E–Beam Lithography

The paper deals with optical characterization of the Al0.295Ga0.705As/GaAs multi-quantum well light emitting diode (LED) structure with photonic crystal (2D PhC) patterned on the top of the structure using Electron Beam Direct Write Lithography (EBDWL). Light-current characteristics measured by inte...

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Bibliographic Details
Published in:Journal of Electrical Engineering 2014-09, Vol.65 (5), p.309-312
Main Authors: Hronec, Pavol, Škriniarová, Jaroslava, Benčurová, Anna, Nemec, Pavol, Pudiš, Dušan, Kováč, Jaroslav
Format: Article
Language:English
Subjects:
Electron beam direct write lithography
Electron beam lithography
Emission
far field
Far fields
Gallium arsenide
Integrating spheres
LED
light extraction
Light-emitting diodes
photonic crystal
Photonic crystals
Two dimensional
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Summary:The paper deals with optical characterization of the Al0.295Ga0.705As/GaAs multi-quantum well light emitting diode (LED) structure with photonic crystal (2D PhC) patterned on the top of the structure using Electron Beam Direct Write Lithography (EBDWL). Light-current characteristics measured by integrating sphere shows increase of extracted light intensity as 21.1%. Additionally, extracted light intensity was studied by far-field measurements as a complementary method to light-current characteristics. The far-field measurements show increase of extracted light intensity as 31.2%. We suggest this method as more suitable for evaluation of extracted light intensity because it omits emission from edges of the LED and thus light is measured only from the area where PhC is patterned
ISSN:1339-309X
1335-3632
1339-309X
DOI:10.2478/jee-2014-0050