Graphene nanomesh photodetector with effective charge tunnelling from quantum dots

Graphene nanomesh (GNM)-based optoelectronics integrated with quantum dots (QDs) are investigated in this article. The charge transfer mechanism in the QDs/GNM interface is probed in four terminal gated FET-type photodetectors. The insulating ligand is used to make the GNM/ligand/QDs vertically beha...

Full description

Saved in:
Bibliographic Details
Published in:Nanoscale 2015-03, Vol.7 (9), p.4242-4249
Main Authors: Liu, Xiang, Liu, Nianze, Liu, Mingju, Tao, Zhi, Kuang, Wenjian, Ji, Xiangbing, Chen, Jing, Lei, Wei, Dai, Qing, Li, Chi, Li, Xuehua, Nathan, Arokia
Format: Article
Language:English
Subjects:
Charge
Graphene
Ligands
Nanostructure
Photodetectors
Quantum dots
Semiconductors
Terminals
Tunnelling
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Graphene nanomesh (GNM)-based optoelectronics integrated with quantum dots (QDs) are investigated in this article. The charge transfer mechanism in the QDs/GNM interface is probed in four terminal gated FET-type photodetectors. The insulating ligand is used to make the GNM/ligand/QDs vertically behave like a metal/insulate/semiconductor (MIS) structure to facilitate the charge tunnelling. With the current constraint effect of the GNM and the effective charge tunnelling, a high-performance photodetector is fabricated with higher responsivity, higher on/off ratio and shorter response time. The results of our analysis and experimental approach can be extended to future graphene-based photodetectors, as long as suitable ligands and an effective architecture are chosen for this type of device.
ISSN:2040-3364
2040-3372
DOI:10.1039/c4nr06883a