Optical and nuclear characterization of Xe-induced nanoporosity in SiO2

We performed RBS, infrared (IR) and C-V measurements in order to follow the evolution of Xe, bubbles/cavities and other defects (with a focus on NBOHC: non-bridging oxygen hole center) and dielectric constant (k), in high dose Xe implantation in SiO2. As-implanted sample provides the lowest value of...

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Bibliographic Details
Published in:Thin solid films 2010-06, Vol.518 (16), p.4721-4725
Main Authors: NAAS, A, DE SOUSA-MENESES, D, HAKIM, B, REGULA, G, BEAUFORT, M. F, BELAIDI, A, NTSOENZOK, E
Format: Article
Language:English
Subjects:
Annealing
Condensed matter: structure, mechanical and thermal properties
Dielectric constant
Evolution
Exact sciences and technology
Holes
Infrared
Ion radiation effects
Nanocomposites
Nanomaterials
Nanostructure
Physical radiation effects, radiation damage
Physics
Silicon dioxide
Structure of solids and liquids
crystallography
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Summary:We performed RBS, infrared (IR) and C-V measurements in order to follow the evolution of Xe, bubbles/cavities and other defects (with a focus on NBOHC: non-bridging oxygen hole center) and dielectric constant (k), in high dose Xe implantation in SiO2. As-implanted sample provides the lowest value of k which increases with post thermal annealing. In the meantime, the concentration of negatively charged defects decreases with annealing while Xe out-diffuses after annealing at 1100A degree C leaving Xe free cavities in the sample. By combining these results one can determine the contribution of nanoporosity in dielectric constant evolution.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2009.12.068