Design and analysis of a 32 nm PVT tolerant CMOS SRAM cell for low leakage and high stability

A novel nine transistor (9T) CMOS SRAM cell design at 32 nm feature size is presented to improve the stability, power dissipation, and delay of the conventional SRAM cell along with detailed comparisons with other designs. An optimal transistor sizing is established for the proposed 9T SRAM cell by...

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Bibliographic Details
Published in:Integration (Amsterdam) 2010-04, Vol.43 (2), p.176-187
Main Authors: Lin, Sheng, Kim, Yong-Bin, Lombardi, Fabrizio
Format: Article
Language:English
Subjects:
Applied sciences
CMOS
Design engineering
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Leakage current
Magnetic and optical mass memories
Memory cell design
Nanotechnology
Optimization
Power dissipation
Process–voltage–temperature variation
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stability
Static random access memory
Storage and reproduction of information
Transistors
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Summary:A novel nine transistor (9T) CMOS SRAM cell design at 32 nm feature size is presented to improve the stability, power dissipation, and delay of the conventional SRAM cell along with detailed comparisons with other designs. An optimal transistor sizing is established for the proposed 9T SRAM cell by considering stability, energy consumption, and write-ability. As a complementary hardware solution at array-level, a novel write bitline balancing technique is proposed to reduce the leakage current. By optimizing its size and employing the proposed write circuit technique, 33% power dissipation saving is achieved in memory array operation compared with the conventional 6T SRAM based design. A new metric that comprehensively captures all of these figures of merit (and denoted to as SPR) is also proposed; under this metric, the proposed 9T SRAM cell is shown to be superior to all other cell configurations found in the technical literatures. The impact of the process variations on the cell design is investigated in detail. HSPICE simulation shows that the 9T SRAM cell demonstrates an excellent tolerance to process variations comparing with the conventional SRAM cells.
ISSN:0167-9260
1872-7522
DOI:10.1016/j.vlsi.2010.01.003