Boron carbide based solid state neutron detectors: the effects of bias and time constant on detection efficiency

Neutron detection in thick boron carbide(BC)/n-type Si heterojunction diodes shows a threefold increase in efficiency with applied bias and longer time constants. The improved efficiencies resulting from long time constants have been conclusively linked to the much longer charge collection times in...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2010-07, Vol.43 (27), p.275101-275101
Main Authors: Hong, Nina, Mullins, John, Foreman, Keith, Adenwalla, S
Format: Article
Language:English
Subjects:
Bias
Boron carbide
Charge
Collection
Diodes
Exact sciences and technology
Experimental methods and instrumentation for elementary-particle and nuclear physics
Heterojunctions
Nuclear physics
Physics
Radiation detectors, dosimeters
Silicon
Solid-state detectors
Time constant
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Summary:Neutron detection in thick boron carbide(BC)/n-type Si heterojunction diodes shows a threefold increase in efficiency with applied bias and longer time constants. The improved efficiencies resulting from long time constants have been conclusively linked to the much longer charge collection times in the BC layer. Neutron detection signals from both the p-type BC layer and the n-type Si side of the heterojunction diode are observed, with comparable efficiencies. Collectively, these provide strong evidence that the semiconducting BC layer plays an active role in neutron detection, both in neutron capture and in charge generation and collection.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/43/27/275101