Effect of band warping and wafer orientation on NMOS mobility under arbitrary applied stress

We have developed a novel simulation approach to model electron mobility in the inversion layer which encompasses all the important effects of arbitrary wafer and applied stress orientations, such as carrier re-population, band warping, and scattering, going beyond the separate treatments of band wa...

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Bibliographic Details
Published in:Journal of computational electronics 2008-09, Vol.7 (3), p.95-98
Main Authors: Kotlyar, R., Weber, C., Shifren, L., Cea, S., Giles, M. D., Stettler, M.
Format: Article
Language:English
Subjects:
Anisotropy
Applied sciences
Compound structure devices
Electrical Engineering
Electron mobility
Electronics
Engineering
Exact sciences and technology
Inversions
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mathematical models
Mechanical Engineering
Metal oxide semiconductors
Optical and Electronic Materials
Orientation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Shear stress
Stresses
Theoretical
Wafers
Warpage
Warping
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Summary:We have developed a novel simulation approach to model electron mobility in the inversion layer which encompasses all the important effects of arbitrary wafer and applied stress orientations, such as carrier re-population, band warping, and scattering, going beyond the separate treatments of band warping and inversion anisotropy that have been demonstrated. Our model predicts an important consequence of electron band warping in retaining the increase of stress gain at high stress levels in the presence of shear stress at strong inversion.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-007-0162-6