Studies of interfacial layers between 4H-SiC (0 0 0 1) and graphene

The region between epitaxial graphene and the SiC substrate has been investigated. 4H-SiC (0001) samples were annealed in a high temperature molecular beam epitaxy system at temperatures between 1100 and 1700°C. The interfacial layers between the pristine SiC and the graphene layers were studied by...

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Bibliographic Details
Published in:Carbon (New York) 2010-04, Vol.48 (5), p.1670-1673
Main Authors: Park, J.H., Mitchel, W.C., Smith, H.E., Grazulis, L., Eyink, K.G.
Format: Article
Language:English
Subjects:
Bonding
Carbon
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Graphene
Graphitization
Materials science
Molecular beam epitaxy
Physics
Silicon
Silicon carbide
Specific materials
Spectra
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Summary:The region between epitaxial graphene and the SiC substrate has been investigated. 4H-SiC (0001) samples were annealed in a high temperature molecular beam epitaxy system at temperatures between 1100 and 1700°C. The interfacial layers between the pristine SiC and the graphene layers were studied by X-ray photoelectron spectroscopy. Graphene was found to grow on the SiC surface at temperatures above 1200°C. Below this temperature, however, sp3 bonded carbon layers were formed with a constant atomic Si concentration. C1s and Si2p core level spectra of the graphene samples suggest that the interface layer we observe has a high carbon concentration and its thickness increases during the graphitization process. A significant concentration of Si atoms is trapped in the interface layer and their concentration also increases during graphitization.
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2009.12.006