Interpreting Space-Mission LET Requirements for SEGR in Power MOSFETs

A TCAD simulation-based method is developed to evaluate whether derating of high-energy heavy-ion accelerator test data bounds the risk for single-event gate rupture (SEGR) from much higher energy on-orbit ions for a mission linear energy transfer (LET) requirement. It is shown that a typical derati...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2010-12, Vol.57 (6), p.3443-3449
Main Authors: Lauenstein, Jean-Marie, Ladbury, Raymond L, Goldsman, Neil, Kim, Hak S, Batchelor, David A, Phan, Anthony M
Format: Article
Language:English
Subjects:
Accelerators
Energy (nuclear)
Hardness
Heavy ion
Ions
linear enery transfer (LET)
MOSFETs
Nuclear power generation
Risk
Simulation
single-event gate rupture (SEGR)
Space environment
Space missions
Spacecraft
vertical power MOSFET
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Summary:A TCAD simulation-based method is developed to evaluate whether derating of high-energy heavy-ion accelerator test data bounds the risk for single-event gate rupture (SEGR) from much higher energy on-orbit ions for a mission linear energy transfer (LET) requirement. It is shown that a typical derating factor of 0.75 applied to a single-event effect (SEE) response curve defined by high-energy accelerator SEGR test data provides reasonable on-orbit hardness assurance, although in a high-voltage power MOSFET, it did not bound the risk of failure.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2010.2086486