GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars

In this letter, the authors report the fabrication of GaN-based light-emitting diodes (LEDs) with mesh indium-tin-oxide p-contact and nanopillars on patterned sapphire substrate. Using hydrothermal ZnO nanorods as the etching hard mask, the authors successfully formed vertical GaN nanopillars inside...

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Bibliographic Details
Published in:IEEE photonics technology letters 2009-09, Vol.21 (18), p.1293-1295
Main Authors: Wei-Chih Lai, Chen, P.H., Chang, L.C., Cheng-Huang Kuo, Jinn-Kong Sheu, Tun, C.J., Shei, S.C.
Format: Article
Language:English
Subjects:
Etching
Fabrication
Gallium nitride
GaN
Indium tin oxide
Leakage current
Light emitting diodes
light-emitting diode (LED)
mesh indium-tin-oxide (ITO) contact
Nanocomposites
Nanomaterials
nanopillars
Nanorods
Nanostructure
patterned sapphire substrate (PSS)
Rough surfaces
Sapphire
Substrates
Surface roughness
Temperature
Voltage
Zinc oxide
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Summary:In this letter, the authors report the fabrication of GaN-based light-emitting diodes (LEDs) with mesh indium-tin-oxide p-contact and nanopillars on patterned sapphire substrate. Using hydrothermal ZnO nanorods as the etching hard mask, the authors successfully formed vertical GaN nanopillars inside the mesh regions and on the mesa-etched regions. It was found that 20-mA forward voltage and reverse leakage currents observed from the proposed LED were only slightly larger than those observed from the conventional LEDs. It was also found that output power of the proposed LED was more than 80% larger than that observed from conventional LED prepared on flat sapphire substrate.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2009.2025380