Complex nanostructures in PMMA made by a single process step using e-beam lithography

We present results on the single step fabrication of autocentered nanopillars with surrounding circular rim. This particular 3-dimensional shape is created by the energy density distribution of incident and backscattered electrons and reflects the dual behavior of PMMA as positive and negative e-bea...

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Bibliographic Details
Published in:Microelectronic engineering 2010-05, Vol.87 (5), p.1139-1142
Main Authors: Gautsch, S., Studer, M., de Rooij, N.F.
Format: Article
Language:English
Subjects:
Applied sciences
Autocentered
Backscattering
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
e-Beam
Electronics
Exact sciences and technology
Lithography
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Materials science
Methods of nanofabrication
Microelectronic fabrication (materials and surfaces technology)
Microelectronics
Nanocomposites
Nanolithography
Nanomaterials
Nanopillars
Nanostructure
Nanostructures
Physics
PMMA
Polymethyl methacrylates
Quantitative analysis
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:We present results on the single step fabrication of autocentered nanopillars with surrounding circular rim. This particular 3-dimensional shape is created by the energy density distribution of incident and backscattered electrons and reflects the dual behavior of PMMA as positive and negative e-beam resist. Structures with 80 nm rim diameter and 20 nm wide nanopillars could be realized. We could show that the characteristic dimensions of the structures can be varied almost independently by playing with the exposure parameters. Qualitative and quantitative analysis of the structure shapes are described and several fields of application are proposed.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2009.10.046