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Bias-Field-Free Microwave Oscillator Driven by Perpendicularly Polarized Spin Current

In this paper, we propose a novel design of spin-torque-driven microwave oscillator that is free of bias magnetic field. The oscillator consists of a perpendicularly magnetized spin-polarization layer and an oscillating bilayer. The oscillating bilayer comprises a spin-torque-driven layer and a magn...

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Published in:	IEEE transactions on magnetics 2006-10, Vol.42 (10), p.2670-2672
Main Authors:	Zhu, X., Zhu, J.-G.
Format:	Article
Language:	English
Subjects:	Anisotropic magnetoresistance Couplings Cross-disciplinary physics: materials science rheology Current density Design engineering Exact sciences and technology Frequency Joining Magnetic analysis Magnetic fields Magnetism Magnetization Materials science Micromagnetic modeling Micromagnetics microwave Microwave oscillators Oscillating Oscillations oscillator Oscillators Other topics in materials science perpendicular magnetic tunnel junction (MTJ) Physics Polarization spin torque
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container_issue	10
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container_title	IEEE transactions on magnetics
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creator	Zhu, X. Zhu, J.-G.
description	In this paper, we propose a novel design of spin-torque-driven microwave oscillator that is free of bias magnetic field. The oscillator consists of a perpendicularly magnetized spin-polarization layer and an oscillating bilayer. The oscillating bilayer comprises a spin-torque-driven layer and a magnetic layer of perpendicular anisotropy with adequate interlayer-exchange coupling. The perpendicularly spin-polarized current can yield a sustained stable magnetization oscillation in the oscillating bilayer around the perpendicular easy axis. The oscillating frequency can be tuned from zero to tens of gigahertz by varying the inject current density. The underlying physical mechanism of the oscillation is discussed, and a micromagnetic analysis on the characteristics of the oscillator is reported
doi_str_mv	10.1109/TMAG.2006.879722
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The oscillator consists of a perpendicularly magnetized spin-polarization layer and an oscillating bilayer. The oscillating bilayer comprises a spin-torque-driven layer and a magnetic layer of perpendicular anisotropy with adequate interlayer-exchange coupling. The perpendicularly spin-polarized current can yield a sustained stable magnetization oscillation in the oscillating bilayer around the perpendicular easy axis. The oscillating frequency can be tuned from zero to tens of gigahertz by varying the inject current density. The underlying physical mechanism of the oscillation is discussed, and a micromagnetic analysis on the characteristics of the oscillator is reported</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMAG.2006.879722</doi><tpages>3</tpages></addata></record>
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source	IEEE Electronic Library (IEL) Journals
subjects	Anisotropic magnetoresistance Couplings Cross-disciplinary physics: materials science rheology Current density Design engineering Exact sciences and technology Frequency Joining Magnetic analysis Magnetic fields Magnetism Magnetization Materials science Micromagnetic modeling Micromagnetics microwave Microwave oscillators Oscillating Oscillations oscillator Oscillators Other topics in materials science perpendicular magnetic tunnel junction (MTJ) Physics Polarization spin torque
title	Bias-Field-Free Microwave Oscillator Driven by Perpendicularly Polarized Spin Current
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