Performance comparison of GaInNAs vertical-cavity semiconductor optical amplifiers

This paper reports on theoretical and experimental investigations of the influence of the number of GaInNAs quantum wells (QWs) on performance of 1.3-/spl mu/m vertical-cavity semiconductor optical amplifiers (VCSOAs). Full characterization is carried out for two optically pumped VCSOAs with 6 and 1...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2005-05, Vol.41 (5), p.642-649
Main Authors: Laurand, N., Calvez, S., Dawson, M.D., Bryce, A.C., Jouhti, T., Konttinen, J., Pessa, M.
Format: Article
Language:English
Subjects:
Amplification
Amplifiers
Distributed Bragg reflectors
Distributed Bragg reflectors (DBRs)
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
GaAs
Gain
GaInNAs
Laser optical systems: design and operation
Lasers
Mirrors
Noise
Noise figure
Optical amplifiers
Optical filters
Optical noise
Optical pumping
Optics
Physics
Quantum electronics
Quantum wells
quantum-well (QW) devices
Reflectivity
Resonators, cavities, amplifiers, arrays, and rings
Semiconductor lasers
laser diodes
Semiconductor optical amplifiers
Stimulated emission
vertical-cavity surface-emitting lasers
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Summary:This paper reports on theoretical and experimental investigations of the influence of the number of GaInNAs quantum wells (QWs) on performance of 1.3-/spl mu/m vertical-cavity semiconductor optical amplifiers (VCSOAs). Full characterization is carried out for two optically pumped VCSOAs with 6 and 15 QWs in the active layer. The 15-QW amplifier is found to be more efficient for amplification purposes but the highest gain to date was obtained for a 6-QW GaInNAs VCSOA, 19-dB on-chip gain in single-mode operation, having a top mirror reflectivity of 97.7%. At high-gain and for low enough reflectivity, the intrinsic noise figure is smaller than 5 dB.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2005.844176