Mesoscopic EMR Device Magnetic Sensitivity in I - V- I - V Configuration

Extraordinary magnetoresistance devices with critical dimensions below 50 nm have been developed in InAs 2-D electron gas (2DEG) quantum well heterostructures, and show the same magnetic sensitivity as Giant magnetoresistance magnetic recording sensors. A new device design, in which fingers of metal...

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Bibliographic Details
Published in:IEEE electron device letters 2009-02, Vol.30 (2), p.117-119
Main Authors: Boone, T.D., Smith, N., Folks, L., Katine, J.A., Marinero, E.E., Gurney, B.A.
Format: Article
Language:English
Subjects:
2-D electron gas (2DEG)
Applied sciences
Compound structure devices
Devices
Electronics
Electrons
Exact sciences and technology
Extraordinary magnetoresistance
Extraordinary magnetoresistance (EMR)
Fingers
Gas detectors
Giant magnetoresistance
InAs
Magnetic devices
Magnetic recording
Magnetic semiconductors
magnetic sensor
Magnetic sensors
Magnetoresistivity
Mesas
Miscellaneous
Recording and replay of audio and video signals
recording head
Scanning
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Signal design
Storage and reproduction of information
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Description
Summary:Extraordinary magnetoresistance devices with critical dimensions below 50 nm have been developed in InAs 2-D electron gas (2DEG) quantum well heterostructures, and show the same magnetic sensitivity as Giant magnetoresistance magnetic recording sensors. A new device design, in which fingers of metal extend into the semiconductor mesa to form leads, yields higher signal and operating currents than the more conventional design with semiconductor tab contacts. Devices built with the 2DEG very close to the surface yield high-signal and high-current carrying capacity, as required for scanning probe and magnetic recording applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2010567