A phenomenologically based transient SPICE model for digitally modulated RF performance characteristics of GaAs MESFETs

A phenomenologically based transient SPICE model was developed for GaAs MESFETs. The model accounts for both trapping and detrapping effects; hence, it can simultaneously simulate low-frequency dispersion and gate-lag characteristics. This is different from conventional models, which can simulate ei...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2001-06, Vol.49 (6), p.1180-1186
Main Authors: Leoni, R.E., Shirokov, M.S., Jianwen Bao, Hwang, J.C.M.
Format: Article
Language:English
Subjects:
Computer simulation
Digital modulation
Dispersion
Gallium arsenide
Gallium arsenides
Mathematical models
MESFETs
Microwaves
Pulse amplifiers
Pulse measurements
Radio frequency
Semiconductor process modeling
SPICE
Spices
Substrates
Trapping
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Summary:A phenomenologically based transient SPICE model was developed for GaAs MESFETs. The model accounts for both trapping and detrapping effects; hence, it can simultaneously simulate low-frequency dispersion and gate-lag characteristics. This is different from conventional models, which can simulate either effect, but not both. The present model has been used to describe both surface- and substrate-related trapping phenomena in epitaxial or ion-implanted MESFETs. The model was experimentally verified in terms of pulsed I-V characteristics and pulsed AC response.
ISSN:0018-9480
1557-9670
DOI:10.1109/22.925517