Effects of gate structures on the RF performance in PD SOI MOSFETs

• Published in: IEEE microwave and wireless components letters 2005-04, Vol.15 (4), p.223-225
• Main Authors: LEE, Byung-Jin, KIM, Kyosun, YU, Chong-Gun, LEE, Jong-Ho, PARK, Jong-Tae
• Format: Article
• Language: English
• Subjects: Amplifiers; Applied sciences; Circuit properties; Cutoff frequency; Devices; Electric, optical and optoelectronic circuits; Electrical resistance measurement; Electronic circuits; Electronics; Exact sciences and technology; FETs; Frequency measurement; Gate structure; Gates; Inversions; Metal oxide semiconductors; metal-oxide-semiconductor field effect transistor (MOSFET); Microwaves; MOSFETs; Noise figure; Noise measurement; Radio frequencies; Radio frequency; radio-frequency (RF) performance; Silicon on insulator technology; silicon-on-insulator (SOI) technology; Transconductance
• ISSN: 1531-1309; 2771-957X; 1558-1764; 2771-9588
• DOI: 10.1109/LMWC.2005.845697

The radio-frequency (RF) performance of PD silicon-on-insulator metal oxide semiconductor field effect transistors with T-gate and H-gate structures has been investigated. Our measurement shows that H-gate devices have larger cutoff frequency and smaller minimum noise figure than T-gate devices. This improved RF performance in H-gate devices can be explained mainly by the enhancement of transconductance resulting from the gate extension induced inversion charges and the low gate resistance. We conclude that the H-gate structure is superior to the T-gate structure for the design of the low-noise amplifier (LNA).