Gate-assisted high-Q-factor junction varactor

In this letter, we demonstrate a high-performance gate-assisted junction varactor. The gate plays an important role in the varactor; it can decrease the series resistance and enlarge the junction capacitance of this device. With the assistance of a positive-biased gate, the Q-factor of a varactor wi...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2005-09, Vol.26 (9), p.682-683
Main Authors: Gau, J.-H., Wu, R.-T., Sang, S., Kuo, C.-H., Chang, T.-L., Chen, H.-H., Chen, A., Ko, J.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitance
Circuit optimization
Devices
Diodes
Electrical resistance measurement
Electronics
Exact sciences and technology
Expansion
Gates
P-n junctions
Phase locked loops
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Tuning
tuning ratio
varactor
Varactors
Voltage
Voltage-controlled oscillators
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this letter, we demonstrate a high-performance gate-assisted junction varactor. The gate plays an important role in the varactor; it can decrease the series resistance and enlarge the junction capacitance of this device. With the assistance of a positive-biased gate, the Q-factor of a varactor with 723 fF capacitance at 2.4 GHz is as high as 108. Its tuning ratio is 30.1% when it is operated in the range of 0.5 to 2.5 V.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.853642