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A 3a8 GHz Low-Noise CMOS Amplifier
A wideband CMOS low-noise amplifier (LNA) is proposed by using the concept of mutual coupling technique implemented through a symmetric center-tap inductor. A frequency widening network is designed with a center-tap inductor at the input and the output of an LNA to achieve bandwidth extension with a...
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Published in: | IEEE microwave and wireless components letters 2009-01, Vol.19 (4) |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | A wideband CMOS low-noise amplifier (LNA) is proposed by using the concept of mutual coupling technique implemented through a symmetric center-tap inductor. A frequency widening network is designed with a center-tap inductor at the input and the output of an LNA to achieve bandwidth extension with a single stage amplifier. The proposed wideband low noise amplifier is implemented in the 0.18 mum CMOS technology. This design obtains a bandwidth of 3-8 GHz with a power consumption of 3.77 mW from a 1.8 V supply. |
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ISSN: | 1531-1309 |
DOI: | 10.1109/LMWC.2009.2015512 |