The modeling of thin-film bulk acoustic wave resonators using the FDTD method

The finite-difference time-domain (FDTD) technique has been applied to analyze electromechanical phenomena of thin-film bulk acoustic wave resonators (TFBARs) for the first time. To simulate several TFBARs that have one-dimensional (1-D) piezoelectric material variations, current-driven governing eq...

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Bibliographic Details
Published in:IEEE electron device letters 2002-06, Vol.23 (6), p.327-329
Main Authors: Seo, Ki-Wone, Ju, Saehoon, Kim, Hyeongdong
Format: Article
Language:English
Subjects:
Acoustic waves
Acoustics
Equations
Film bulk acoustic resonators
Finite difference method
Finite difference methods
Finite difference time domain method
Impedance
Levee
Mathematical analysis
Mathematical models
Piezoelectric films
Piezoelectric materials
Piezoelectricity
Resonators
Temporal logic
Thin films
Time domain analysis
Transistors
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Summary:The finite-difference time-domain (FDTD) technique has been applied to analyze electromechanical phenomena of thin-film bulk acoustic wave resonators (TFBARs) for the first time. To simulate several TFBARs that have one-dimensional (1-D) piezoelectric material variations, current-driven governing equations are discretized in spatial and temporal domain. The impedance characteristics are obtained by the proposed method and compared with the analytical solutions of the 1-D Mason model. Also, the values of lumped elements for the Butterworth Van Dyke (BVD) equivalent circuit are extracted. The results show that the proposed scheme has the potential to analyze the characteristics of arbitrary piezoelectric material embedded structures.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2002.1004224