A 0.4 dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device

In this work, the design of a novel low-noise amplifier (LNA) based on 1 μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radioastronomy applications, this amplifier exploits a common-drain configuration as input stage and a common-source inductive degeneration topology...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2011-06, Vol.14 (2), p.89-93
Main Authors: Hamaizia, Z., Sengouga, N., Missous, M., Yagoub, M.C.E.
Format: Article
Language:English
Subjects:
Amplifiers
Applied sciences
Circuit properties
Devices
Electric, optical and optoelectronic circuits
Electrical engineering. Electrical power engineering
Electronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
HEMT
Indium gallium arsenides
Indium phosphides
LNA
Materials science
Noise
Noise levels
Power electronics, power supplies
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
SKA
SKADS
Telescope
Transistors
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Summary:In this work, the design of a novel low-noise amplifier (LNA) based on 1 μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radioastronomy applications, this amplifier exploits a common-drain configuration as input stage and a common-source inductive degeneration topology as output stage. It exhibits a maximum gain of 30 dB within an input 1 dB compression point of −16 dBm. The noise figure is 0.4 dB with an input return loss greater than −10 dB and an output return loss of −12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2010.12.003